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VS-GB100TH120N www.vishay.
VS-GB100TH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 100 A, TJ = 25 °C - 1.9 2.35 VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.1 7.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 4.0 mA, TJ = 25 °C 5.0 6.
VS-GB100TH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature Storage temperature range TEST CONDITIONS MIN. TYP. MAX. TJ - - 150 TSTG - 40 - 125 - - 0.150 - - 0.225 - 0.035 - °C IGBT Junction to case Diode Case to sink RthJC RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 Mounting torque 300 200 g 30 VCC = 600 V Rg = 5.
VS-GB100TH120N www.vishay.com Vishay Semiconductors 220 200 180 IC, Module 160 IC (A) 140 120 100 80 60 Rg = 5.6 Ω VGE = ± 15 V TJ = 125 °C 40 20 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA 100 ZthJC (K/W) IGBT 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 200 10 9 175 8 150 7 25 °C E (mJ) IF (A) 125 100 125 °C 75 Erec 6 5 4 VCC = 600 V Rg = 5.6 Ω VGE = - 15 V TJ = 125 °C 3 50 2 25 1 0 0 0 0.5 1 1.5 2 2.5 3 VF (V) Fig.
VS-GB100TH120N www.vishay.com Vishay Semiconductors 8 VCC = 600 V IC = 100 A VGE = - 15 V TJ = 125 °C 7 6 E (mJ) 5 EREC 4 3 2 1 0 0 10 20 30 40 50 60 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Rg 100 ZthJC (K/W) DIODE 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 26-Mar-13 www.vishay.
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