User Manual

VS-GB100LP120N
www.vishay.com
Vishay Semiconductors
Revision: 04-Mar-13
3
Document Number: 94808
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Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Switching Loss vs. Collector Current
Fig. 4 - Switching Loss vs. Gate Resistor
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
- 40 - 150
°C
Storage temperature range T
STG
- 40 - 125
Junction to case
IGBT (per 1/2 module)
R
thJC
- - 0.19
K/WDiode (per 1/2 module) - - 0.28
Case to sink R
thCS
Conductive grease applied - 0.05 -
Mounting torque
Power terminal screw: M5 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 6.0
Weight of module 150 g
012345
0
50
100
150
200
250
300
V
GE
= 15 V
25 °C
125 °C
V
CE
(V)
I
C
(A)
0
40
80
120
160
200
01 32457968 1210 11 13
V
GE
(V)
I
C
(A)
V
CE
= 20 V
25 °C
125 °C
0
20
40
60
80
100
0 50 100 150 200 300250
I
C
(A)
E
on
, E
off
(mJ)
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 3 Ω
V
CC
= 600 V
E
on
E
off
0
5
10
15
20
25
0102030
R
g
( Ω )
E
on
, E
off
(mJ)
E
on
E
off
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 100 A
V
CC
= 600 V