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VS-GB100LP120N www.vishay.
VS-GB100LP120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 100 A, TJ = 25 °C - 1.8 - VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.0 7.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 2 mA, TJ = 25 °C 5.0 6.
VS-GB100LP120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS MIN. TYP. MAX. TJ - 40 - 150 TSTG - 40 - 125 - - 0.19 - - 0.28 - 0.05 - °C IGBT (per 1/2 module) Junction to case RthJC Diode (per 1/2 module) Case to sink Conductive grease applied RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 6.
VS-GB100LP120N www.vishay.com Vishay Semiconductors 20 103 VCC = 600 V td(off) 10 t (ns) VGE (V) 15 td(on) 102 tr tf 5 VCC = 600 V Rg = 3 Ω VGE = ± 15 V TJ = 125 °C IC = 100 A TJ = 25 °C 0 0 0.2 0.4 0.6 0.8 101 1 0 Qg (μC) 101 104 150 200 250 VCC = 600 V IC = 100 A VGE = ± 15 V TJ = 125 °C Cies 103 td(off) 102 td(on) tr t (ns) C (nF) 100 IC (A) Fig. 7 - Typical Switching Time vs. IC Fig.
VS-GB100LP120N www.vishay.com Vishay Semiconductors 100 Diode ZthJC (K/W) 10-1 IGBT 10-2 10-3 10-4 10-5 10-4 10-2 10-3 10-1 100 tp (s) Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 LINKS TO RELATED DOCUMENTS Dimensions Revision: 04-Mar-13 www.vishay.com/doc?95524 Document Number: 94808 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
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