User guide

VS-GB100LH120N
www.vishay.com
Vishay Semiconductors
Revision: 16-Jan-13
3
Document Number: 94753
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
- 40 - 150
°C
Storage temperature range T
STG
- 40 - 125
Junction to case
IGBT part, per 1/2 module
R
thJC
- - 0.15
K/WDiode part, per 1/2 module - - 0.29
Case to sink R
thCS
Conductive grease applied - 0.035 -
Mounting torque
Power terminal screw: M6 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 6.0
Weight 300 g
V
CE
(V)
I
C
(A)
0
50
100
150
200
250
300
01 234 5
25 °C
125 °C
V
GE
= 15 V
V
GE
(V)
I
C
(A)
0
40
80
120
140
160
200
0
135792 4 6 8 10 11 12 13
V
CE
= 20 V
25 °C
125 °C
0
5
10
15
20
25
30
35
0 50 100 150 200
I
C
(A)
E
ON
, E
OFF
(mJ)
V
GE
= ± 15 V
T
J
= 125 °C
R
G
= 8 Ω
V
CC
= 600 V
E
off
E
on
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20 25
R
g
(Ω)
E
ON
, E
OFF
(mJ)
E
off
E
on
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 100 A
V
CC
= 600 V