User guide

VS-GB100LH120N
www.vishay.com
Vishay Semiconductors
Revision: 16-Jan-13
2
Document Number: 94753
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 100 A, T
J
= 25 °C - 1.77 -
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C - 2.0 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 2.0 mA, T
J
= 25 °C 5.0 6.2 7.0
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 1.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 100 A, R
g
= 8 ,
V
GE
= ± 15 V, T
J
= 25 °C
-75-
ns
Rise time t
r
-40-
Turn-off delay time t
d(off)
- 400 -
Fall time t
f
-60-
Turn-on switching loss E
on
-6.0-
mJ
Turn-off switching loss E
off
-3.7-
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 100 A, R
g
= 8 ,
V
GE
= ± 15 V, T
J
= 125 °C
-80-
ns
Rise time t
r
-50-
Turn-off delay time t
d(off)
- 420 -
Fall time t
f
-65-
Turn-on switching loss E
on
-8.4-
mJ
Turn-off switching loss E
off
-5.8-
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz
-8.96-
nFOutput capacitance C
oes
-0.96-
Reverse transfer capacitance C
res
-0.45-
SC data I
SC
t
sc
 10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 900 V, V
CEM
 1200 V
- 540 - A
Internal gate resistance R
GINT
-5-
Stray inductance L
CE
- - 20 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.35 - m
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage V
F
I
F
= 100 A
T
J
= 25 °C - 1.98 -
V
T
J
= 125 °C - 2.21 -
Diode reverse recovery charge Q
rr
I
F
= 100 A, V
R
= 600 V,
dI/dt = - 3600 A/μs,
V
GE
= - 15 V
T
J
= 25 °C - 10 -
μC
T
J
= 125 °C - 16 -
Diode peak reverse recovery current I
rr
T
J
= 25 °C - 90 -
A
T
J
= 125 °C - 120 -
Diode reverse recovery energy E
rec
T
J
= 25 °C - 3.5 -
mJ
T
J
= 125 °C - 6.0 -