Instruction Manual

VS-GA75TP60S
www.vishay.com
Vishay Semiconductors
Revision: 04-Mar-13
3
Document Number: 94810
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
G
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction temperature T
J
- - 150 °C
Storage temperature range T
Stg
- 40 - 125 °C
Junction to case
IGBT
R
thJC
- - 0.42
K/WDiode - - 1.04
Case to sink (Conductive grease applied) R
thCS
-0.05-
Mounting torque
Power terminal screw: M5 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight Weight of module - 150 - g
0
25
50
75
100
125
150
012 31.5 2.5 43.50.5
25 °C
125 °C
V
GE
= 15 V
V
CE
(V)
I
C
(A)
0
25
50
75
100
125
150
46 810795
25 °C
125 °C
V
CE
= 20 V
V
GE
(V)
I
C
(A)
025 7550 100 125 150
0
4
2
1
3
5
6
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 18 Ω
V
CC
= 300 V
E
on
E
off
I
C
(A)
E
on
, E
off
(mJ)
020 6040 80 100
0
8
4
2
6
10
12
E
on
, E
off
(mJ)
R
g
(Ω)
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 75 A
V
CC
= 300 V
E
on
E
off