Instruction Manual

VS-GA75TP60S
www.vishay.com
Vishay Semiconductors
Revision: 04-Mar-13
2
Document Number: 94810
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 600 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 75 A, T
J
= 25 °C - 1.95 2.40
V
GE
= 15 V, I
C
= 75 A, T
J
= 125 °C - 2.25 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA, T
J
= 25 °C 3.5 4.5 5.5
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 1.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 300 V, I
C
= 75 A, R
g
= 18 ,
V
GE
= ± 15 V, T
J
= 25 °C
- 217 -
ns
Rise time t
r
-72-
Turn-off delay time t
d(off)
- 230 -
Fall time t
f
-88-
Turn-on switching loss E
on
-1.69-
mJ
Turn-off switching loss E
off
-1.33-
Turn-on delay time t
d(on)
V
CC
= 300 V, I
C
= 75 A, R
g
= 18 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 213 -
ns
Rise time t
r
-72-
Turn-off delay time t
d(off)
- 236 -
Fall time t
f
- 103 -
Turn-on switching loss E
on
-1.79-
mJ
Turn-off switching loss E
off
-1.80-
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 30 V, f = 1.0 MHz
-4.30-
nFOutput capacitance C
oes
-0.35-
Reverse transfer capacitance C
res
-0.16-
SC data I
SC
t
p
 10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 360 V, V
CEM
 600 V
-TBD- A
Stray inductance L
CE
- - 30 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.75 - m
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Forward voltage V
F
I
F
= 75 A
T
J
= 25 °C - 1.50 1.90
V
T
J
= 125 °C - 1.55 -
Reverse recovery charge Q
rr
I
F
= 75 A, V
R
= 300 V,
dI
F
/dt = 1200 A/μs
V
GE
= - 15 V
T
J
= 25 °C - 3.2 -
μC
T
J
= 125 °C - 4.2 -
Peak reverse recovery current I
rr
T
J
= 25 °C - 49 -
A
T
J
= 125 °C - 51 -
Reverse recovery energy E
rec
T
J
= 25 °C - 0.76 -
mJ
T
J
= 125 °C - 0.96 -