Instruction Manual

VS-GA75TP60S
www.vishay.com
Vishay Semiconductors
Revision: 04-Mar-13
1
Document Number: 94810
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Molding Type Module IGBT,
2 in1 Package 600 V, 75 A
FEATURES
•Low V
CE(on)
trench NPT IGBT technology
• 10 μs short circuit capability
•V
CE(on)
with positive temperature coefficient
• Rugged with ultrafast performance
•Square RBSOA
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Electronic welders
• SMPS (Switching mode power supplies)
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
600 V
I
C
at T
C
= 80 °C 75 A
V
CE(on)
(typical)
at I
C
= 75 A, 25 °C
1.95 V
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600
V
Gate to emitter voltage V
GES
± 20
Collector current I
C
T
C
= 25 °C 110
A
T
C
= 80 °C 75
Pulsed collector current I
CM
(1)
t
p
= 1 ms 150
Diode continuous forward current I
F
75
Diode maximum forward current I
FM
t
p
= 1 ms 150
Maximum power dissipation P
D
T
J
= 150 °C 297 W
Short circuit withstand time t
SC
T
J
= 125 °C 10 μs
RMS isolation voltage V
ISOL
f = 50 Hz, t = 1 min 2500 V