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VS-GA75TP60S www.vishay.
VS-GA75TP60S www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 600 - - VGE = 15 V, IC = 75 A, TJ = 25 °C - 1.95 2.40 VGE = 15 V, IC = 75 A, TJ = 125 °C - 2.25 - UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 250 μA, TJ = 25 °C 3.5 4.5 5.
VS-GA75TP60S www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction temperature Storage temperature range TEST CONDITIONS MIN. TYP. MAX. UNITS TJ - - 150 °C TStg - 40 - 125 °C - - 0.42 - - 1.04 - 0.05 - IGBT Junction to case RthJC Diode Case to sink (Conductive grease applied) RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 5.
VS-GA75TP60S www.vishay.com Vishay Semiconductors 160 140 Module 120 IC (A) 100 80 60 40 Rg = 18 Ω VGE = ± 15 V TJ = 125 °C 20 0 0 200 400 600 800 VCE (V) Fig. 5 - RBSOA 100 ZthJC (K/W) IGBT 10-1 10-2 10-2 10-3 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 1.8 150 1.6 125 1.4 25 °C Erec 1.2 E (mJ) IC (A) 100 75 50 1.0 0.8 0.6 VCC = 300 V Rg = 18 Ω VGE = - 15 V TJ = 125 °C 125 °C 0.4 25 0.2 0 0 0 0.4 0.8 1.2 1.
VS-GA75TP60S www.vishay.com Vishay Semiconductors 1.2 1.0 Erec E (mJ) 0.8 0.6 0.4 VCC = 300 V IC = 75 A VGE = - 15 V TJ = 125 °C 0.2 0 0 20 40 60 80 100 Rg (Ω) Fig. 9 - Diode Switching Loss vs. RG 100 ZthJC (K/W) Diode 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 04-Mar-13 www.vishay.
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