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GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 400 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 Dual INT-A-PAK Low Profile • Compliant to RoHS Directive 2002/95/EC • Designed for industrial level BENEFITS PRODUCT SUMMARY • Incre
GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 400 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Diode forward voltage drop Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) ICES VFM IGES TEST CONDITIONS MIN. TYP. MAX.
GA400TD60S Dual INT-A-PAK Low Profile "Half-Bridge" Vishay Semiconductors (Standard Speed IGBT), 400 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating junction and storage temperature range SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - - 0.08 - - 0.4 - 0.
GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 400 A 800 10 VCE = 20 V 700 TJ = 125 °C 1 600 ICES (mA) IC (A) 500 TJ = 125 °C 400 TJ = 25 °C 300 0.1 TJ = 25 °C 0.01 200 100 0 3 4 5 6 7 8 VGE (V) 93363_05 0.001 100 9 200 300 400 500 600 VCES (V) 93363_08 Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current Fig. 5 - Typical IGBT Transfer Characteristics 5.0 600 4.5 500 4.0 400 IF (A) Vgeth (V) TJ = 25 °C 3.
GA400TD60S Dual INT-A-PAK Low Profile "Half-Bridge" Vishay Semiconductors (Standard Speed IGBT), 400 A 10 000 175 Switching Time (ns) 150 Energy (mJ) 125 100 Eoff 75 50 25 tf td(off) 1000 td(on) tr Eon 100 0 0 100 200 300 0 400 IC (A) 93363_11 5 10 15 20 25 Rg (Ω) 93363_14 Fig. 14 - Typical IGBT Switching Time vs. Rg, TJ = 125 °C, IC = 400 A, VCC = 360 V, VGE = 15 V, L = 500 μH Fig. 11 - Typical IGBT Energy Loss vs. IC, TJ = 125 °C, VCC = 360 V, Rg = 1.
GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 400 A 22 20 18 16 Qrr (μC) 14 TJ = 125 °C 12 10 8 6 TJ = 25 °C 4 2 0 100 200 300 400 500 600 700 800 900 1000 dIF/dt (A/μs) 93363_17 Fig. 17 - Typical Reverse Recovery Charge vs. dIF/dt, VCC = 400 V, IF = 300 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.
GA400TD60S Dual INT-A-PAK Low Profile "Half-Bridge" Vishay Semiconductors (Standard Speed IGBT), 400 A ORDERING INFORMATION TABLE Device code G A 400 T D 60 S 1 2 3 4 5 6 7 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - A = Generation 4 IGBT 3 - Current rating (400 = 400 A) 4 - Circuit configuration (T = Half-bridge) 5 - Package indicator (D = Dual INT-A-PAK Low Profile) 6 - Voltage rating (60 = 600 V) 7 - Speed/type (S = Standard Speed IGBT) CIRCUIT CONFIGURATION 3 4
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