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GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 Dual INT-A-PAK Low Profile • Compliant to RoHS Directive 2002/95/EC • Designed for industrial level BENEFITS PRODUCT SUMMARY VCES 6
GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Diode forward voltage drop Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) ICES VFM IGES TEST CONDITIONS MIN. TYP. MAX.
GA300TD60S Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating junction and storage temperature range SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - - 0.11 - - 0.4 - 0.
GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A 600 10 VCE = 20 V 500 TJ = 125 °C 1 TJ = 125 °C 300 ICES (mA) IC (A) 400 TJ = 25 °C 0.1 200 0.01 TJ = 25 °C 100 0 4 5 6 7 8 9 VGE (V) 93362_05 0.001 100 10 200 300 400 500 600 VCES (V) 93362_08 Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current Fig. 5 - Typical IGBT Transfer Characteristics 5.5 600 5.0 500 4.5 400 IF (A) Vgeth (V) TJ = 25 °C 4.
GA300TD60S Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A Vishay Semiconductors 10 000 150 Switching Time (ns) Energy (mJ) 125 100 Eoff 75 50 25 tf 1000 td(on) td(off) tr Eon 100 0 0 50 100 150 200 250 300 IC (A) 93362_11 0 350 5 10 15 20 25 Rg (Ω) 93362_14 Fig. 11 - Typical IGBT Energy Loss vs. IC, TJ = 125 °C, VCC = 360 V, Rg = 1.5 , VGE = 15 V, L = 500 μH Fig. 14 - Typical IGBT Switching Time vs.
GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A 22 20 18 16 Qrr (μC) 14 TJ = 125 °C 12 10 8 6 TJ = 25 °C 4 2 0 100 200 300 400 500 600 700 800 900 1000 dIF/dt (A/μs) 93362_17 Fig. 17 - Typical Reverse Recovery Charge vs. dIF/dt, VCC = 400 V, IF = 300 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.
GA300TD60S Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code G A 300 T D 60 S 1 2 3 4 5 6 7 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - A = Generation 4 IGBT 3 - Current rating (300 = 300 A) 4 - Circuit configuration (T = Half-bridge) 5 - Package indicator (D = Dual INT-A-PAK Low Profile) 6 - Voltage rating (60 = 600 V) 7 - Speed/type (S = Standard Speed IGBT) CIRCUIT CONFIGURATION 3
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