Owner manual

VS-GA250SA60S
www.vishay.com
Vishay Semiconductors
Revision: 20-Jul-12
2
Document Number: 94704
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Notes
(1)
Pulse width  80 μs; duty factor  0.1 %
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 1 mA 600 - -
V
Emitter to collector breakdown voltage
V
(BR)ECS
(1)
V
GE
= 0 V, I
C
= 1.0 A 18 - -
Collector to emitter voltage V
CE(on)
I
C
= 100 A
V
GE
= 15 V
- 1.10 1.3
I
C
= 200 A - 1.33 1.66
I
C
= 100 A, T
J
= 125 °C - 1.02 -
I
C
= 200 A, T
J
= 125 °C - 1.32 -
I
C
= 100 A, T
J
= 150 °C - 1.02 -
I
C
= 200 A, T
J
= 150 °C - 1.33 -
Gate threshold voltage
V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA 3.0 4.5 6.0
V
CE
= V
GE
, I
C
= 250 μA, T
J
= 125 °C - 3.1 -
Temperature coefficient of threshold voltage V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1 mA, 25 °C to 125 °C - - 12 - mV/°C
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 600 V - 20 1000 μA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C - 0.2 -
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C - 0.6 10
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 250 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 100 A, V
CC
= 600 V, V
GE
= 15 V
- 770 1200
nCGate-to-emitter charge (turn-on) Q
ge
- 100 150
Gate-to-collector charge (turn-on) Q
gc
- 260 380
Turn-on switching loss E
on
T
J
= 25 °C
I
C
= 100 A
V
CC
= 480 V
V
GE
= 15 V
R
g
= 5.0 
L = 500 μH
Energy
losses
include tail
and diode
recovery.
Diode used
60APH06
-0.55-
mJTurn-off switching loss E
off
-25-
Total switching loss E
tot
-25.5-
Turn-on delay time t
d(on)
- 267 -
ns
Rise time t
r
-42-
Turn-off delay time t
d(off)
- 310 -
Fall time t
f
- 450 -
Turn-on switching loss E
on
T
J
= 125 °C
I
C
= 100 A
V
CC
= 480 V
V
GE
= 15 V
R
g
= 5.0 
L = 500 μH
-0.67-
mJTurn-off switching loss E
off
-43.0-
Total switching loss E
tot
-43.7-
Turn-on delay time t
d(on)
- 275 -
ns
Rise time t
r
-50-
Turn-off delay time t
d(off)
- 350 -
Fall time t
f
- 700 -
Internal emitter inductance L
E
Between lead and
center of die contact
-5.0- nH
Input capacitance C
ies
V
GE
= 0 V , V
CC
= 30 V, f = 1.0 MHz
- 16 250 -
pFOutput capacitance C
oes
- 1040 -
Reverse transfer capacitance C
res
- 190 -