Owner manual

VS-GA250SA60S
www.vishay.com
Vishay Semiconductors
Revision: 20-Jul-12
1
Document Number: 94704
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Insulated Gate Bipolar Transistor
Ultralow V
CE(on)
, 250 A
Note
(1)
Maximum collector current admitted 100 A to do not exceed the
maximum temperature of terminals
FEATURES
• Standard: Optimized for minimum saturation
voltage and low speed up to 5 kHz
• Lowest conduction losses available
• Fully isolated package (2500 V
AC
)
• Very low internal inductance (5 nH typical)
• Industry standard outline
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, TIG welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
Note
(1)
Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals
PRODUCT SUMMARY
V
CES
600 V
V
CE(on)
(typical) at 200 A, 25 °C 1.33 V
I
C
at T
C
= 90 °C
(1)
250 A
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current I
C
(1)
T
C
= 25 °C 400
A
T
C
= 90 °C 250
Pulsed collector current I
CM
Repetitive rating; V
GE
= 20 V, pulse width limited
by maximum junction temperature
400
Clamped Inductive load current I
LM
V
CC
= 80 % (V
CES
), V
GE
= 20 V,
L = 10 μH, R
g
= 2.0 ,
400
Gate to emitter voltage V
GE
± 20 V
Power dissipation P
D
T
C
= 25 °C 961
W
T
C
= 90 °C 462
Isolation voltage V
ISOL
Any terminal to case, t = 1 minute 2500 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature T
J
, T
STG
- 40 - 150 °C
Junction to case thermal resistance R
thJC
- - 0.13
°C/W
Case to sink thermal resistance, flat, greased surface R
thCS
-0.1 -
Mounting torque, on terminals and heatsink T - - 1.3 Nm
Weight - 30 - g
Case style SOT-227