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VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline SOT-227 • Designed and qualified for industrial level • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.
VS-GA250SA60S www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER MIN. TYP. MAX. Collector to emitter breakdown voltage V(BR)CES VGE = 0 V, IC = 1 mA 600 - - Emitter to collector breakdown voltage V(BR)ECS (1) VGE = 0 V, IC = 1.0 A Collector to emitter voltage SYMBOL VCE(on) TEST CONDITIONS 18 - - IC = 100 A - 1.10 1.3 IC = 200 A - 1.33 1.66 IC = 100 A, TJ = 125 °C - 1.02 - - 1.32 - - 1.
VS-GA250SA60S www.vishay.com Vishay Semiconductors 10 140 ICES - Collector Current (mA) Allowable Case Temperature (°C) 160 120 100 80 60 40 20 0 0 TJ = 150 °C 1 0.1 TJ = 125 °C 0.01 TJ = 25 °C 0.001 0.0001 100 50 100 150 200 250 300 350 400 450 500 200 300 400 500 600 VCE - Collector-to-Emitter Voltage (V) Fig.
VS-GA250SA60S www.vishay.com Vishay Semiconductors 1000 Eoff Eoff 100 Energy Losses (mJ) Switching Energy (mJ) 1000 10 Eon 1 100 Eon 10 1 0.1 0.1 25 50 75 100 125 150 175 200 0 225 10 20 30 40 50 IC - Collector Current (A) Rg (Ω) Fig. 7 - Typical IGBT Energy Losses vs. IC, TJ = 125 °C, VCC = 480 V, VGE = 15 V, L = 500 μH, Rg = 5 , Diode used: 60APH06 Fig. 9 - Typical IGBT Energy Losses vs.
VS-GA250SA60S www.vishay.com Vishay Semiconductors 250 For both: Triangular wave: I Duty cycle: 50 % TJ = 125 °C Tsink = 90 °C Clamp voltage: Gate drive as specified 80 % of rated Power dissipation = 140 W Load Current (A) 200 150 Square wave: 60 % of rated voltage I 100 50 Ideal diodes 0 1 0.1 10 100 f - Frequency (kHz) Fig. 12 - Typical Load Current vs.
VS-GA250SA60S www.vishay.com Vishay Semiconductors L D.U.T. VC* RL = 50 V 0 V to 480 V 1000 V 480 V 4 x IC at 25 °C 480 µF 960 V 1 2 * Driver same type as D.U.T.; VC = 80 % of VCE (max) Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain rated Id Fig. 16a - Clamped Inductive Load Test Circuit Fig. 16b - Pulsed Collector Current Test Circuit IC L D.U.T. Driver* VC 50 V 1000 V 1 2 3 * Driver same type as D.U.T., VC = 480 V Fig.
VS-GA250SA60S www.vishay.
Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.
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