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VS-GA200TH60S www.vishay.
VS-GA200TH60S www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES Collector to emitter voltage VCE(on) Gate to emitter threshold voltage VGE(th) TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 600 - - VGE = 15 V, IC = 200 A, TJ = 25 °C - 1.9 - VGE = 15 V, IC = 200 A, TJ = 125 °C - 2.3 - VCE = VGE, IC = 0.25 mA, TJ = 25 °C 3.5 4.5 5.
VS-GA200TH60S www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS MIN. TYP. MAX. TJ - 40 - 150 TSTG - 40 - 125 - - 0.12 - - 0.27 - 0.03 - °C IGBT Junction to case RthJC Diode Case to sink Conductive grease applied RthCS Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 6.
VS-GA200TH60S www.vishay.com Vishay Semiconductors 20 103 VCC = 300 V 18 td(off) 16 12 t (ns) VGE (V) 14 10 8 td(on) tr 102 tf 6 VCC = 300 V Rg = 4.7 Ω VGE = ± 15 V TJ = 125 °C 4 IC = 100 A 2 TJ = 25 °C 0 0 100 200 300 400 500 600 101 700 0 200 100 Qg (nC) 300 400 IC (A) Fig. 5 - Gate Charge Characteristics Fig. 7 - Switching Times vs.
VS-GA200TH60S www.vishay.com Vishay Semiconductors 100 ZthJC (K/W) Diode 10-1 IGBT 10-2 10-3 10-3 10-2 10-1 100 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 17-Sep-12 www.vishay.com/doc?95525 Document Number: 94762 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
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