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VS-GA100TP60S www.vishay.
VS-GA100TP60S www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 600 - - VGE = 15 V, IC = 100 A, TJ = 25 °C - 1.9 - VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.3 - UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 1.5 mA, TJ = 25 °C 3.5 4.5 5.
VS-GA100TP60S www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ - 40 - 150 °C TStg - 40 - 125 °C - - 0.17 - - 0.48 - 0.05 - Operating junction temperature range Storage temperature range TEST CONDITIONS IGBT Junction to case (per 1/2 module) RthJC Diode Case to sink (Conductive grease applied) RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 6.
VS-GA100TP60S www.vishay.com Vishay Semiconductors 16 103 VCC = 300 V Rg = 2.2 Ω VGE = ± 15 V TJ = 125 °C 14 VCC = 400 V 12 t (ns) VGE (V) 10 8 td(off) 102 6 td(on) 4 tr tf IC = 100 A TJ = 25 °C 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 101 0.7 0 50 100 150 200 250 Qg (μC) IC (A) Fig. 5 - Gate Charge Characteristics Fig. 7 - Typical Switching Time vs.
VS-GA100TP60S www.vishay.com Vishay Semiconductors 100 Diode ZthJC (K/W) 10-1 IGBT 10-2 10-3 10-4 10-5 10-4 10-2 10-3 10-1 100 tp (s) Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 28-Nov-12 www.vishay.com/doc?95524 Document Number: 94811 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
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