Instruction Manual

VS-EMG050J60N
www.vishay.com
Vishay Semiconductors
Revision: 09-Dec-11
2
Document Number: 93495
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ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
PFC IGBT Q1 - Q2
Collector to emitter breakdown voltage BV
CES
V
GE
= 0 V, I
C
= 500 μA 600 - - V
Temperature coefficient of
breakdown voltage
BV
CES
/T
J
V
GE
= 0 V, I
C
= 500 μA
(25 °C to 125 °C)
-0.1-V/°C
Collector to emitter voltage V
CE(ON)
V
GE
= 15 V, I
C
= 27 A - 1.44 1.75
V
V
GE
= 15 V, I
C
= 50 A - 1.8 2.1
V
GE
= 15 V, I
C
= 27 A, T
J
= 125 °C - 1.7 2.05
V
GE
= 15 V, I
C
= 50 A, T
J
= 125 °C - 2.2 2.5
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA 2.9 3.9 5.3
Temperature coefficient of threshold
voltage
V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1 mA
( 25 °C to 125 °C)
-- 10-mV/°C
Forward transconductance g
fe
V
CE
= 20 V, I
C
= 50 A - 95 - s
Transfer characteristics V
GE
V
CE
= 20 V, I
C
= 50 A - 5.9 - V
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 600 V - 3 100 μA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C - 0.170 3 mA
Gate to emitter leakage current I
GES
V
GE
= ± 20 V, V
CE
= 0 V - ± 200 nA
ANTIPARALLEL DIODE D1 - D2
Forward voltage drop V
F
I
F
= 20 A - 2.19 2.4
V
I
F
= 20 A, T
J
= 125 °C - 1.93 2.15
PFC DIODE D3 - D4
Cathode to anode breakdown voltage V
BR
I
R
= 500 μA 600 - - V
Reverse leakage current I
RM
V
R
= 600 V - 27 250 μA
V
R
= 600 V, T
J
= 125 °C - 0.1 1 mA
Forward voltage drop V
F
I
F
= 10 A - 1.34 1.63
V
I
F
= 10 A, T
J
= 125 °C - 1.36 1.65
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
PFC IGBT Q1 - Q2 (WITH FREEWHEELING D3 - D4 PFC DIODE)
Total gate charge (turn-on) Q
g
I
C
= 70 A
V
CC
= 400 V
V
GE
= 15 V
- 480 720
nCGate to emitter charge (turn-on) Q
ge
- 82 164
Gate to collector charge (turn-on) Q
gc
- 160 260
Turn-on switching loss E
ON
I
C
= 50 A
V
CC
= 400 V
V
GE
= 15 V
R
g
= 4.7 
L = 500 μH
T
J
= 25 °C
(1)
- 0.155 -
mJTurn-off switching loss E
OFF
- 0.471 -
Total switching loss E
TOT
- 0.626 -
Turn-on delay time t
d(on)
- 196 -
ns
Rise time t
r
-29-
Turn-off delay time t
d(off)
- 220 -
Fall time t
f
-67-