Owner's manual

VS-175BGQ045
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Vishay Semiconductors
Revision: 11-Dec-12
2
Document Number: 94582
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Forward voltage drop V
FM
(1)
100 A
T
J
= 25 °C
0.55 0.58
V
175 A 0.67 0.75
100 A
T
J
= 150 °C
0.49 0.54
175 A 0.63 0.7
Reverse leakage current I
RM
(1)
T
J
= 150 °C, V
R
= 45 V 1200 2000
mAT
J
= 25 °C
V
R
= Rated V
R
0.6 2
T
J
= 125 °C 360 640
Maximum junction capacitance C
T
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz) 25 °C 5600 pF
Typical series inductance L
S
Measured from tab to mounting plane 3.5 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.25
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.20
Approximate weight
5g
0.18 oz.
Mounting torque
minimum 1.2 (10)
N · m
(lbf · in)
maximum 2.4 (20)
Marking device Case style PowerTab
®
175BGQ045
V
FM
- Forward Voltage Drop (V)
I
F
-
Instantaneous Forward Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
1000
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0 5 10 15 20 25 30 35 40 45
0.01
0.1
1
10
100
1000
10 000
75 °C
100 °C
50 °C
125 °C
150 °C
25 °C