Owner's manual

VS-175BGQ045
www.vishay.com
Vishay Semiconductors
Revision: 11-Dec-12
1
Document Number: 94582
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Schottky Rectifier, 175 A
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
• Ultralow forward voltage drop
• Continuous high current operation
• Guard ring for enhanced ruggedness and long
term reliability
• Screw mounting only
• Designed and qualified according to JEDEC-JESD47
• PowerTab
®
package
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-175BGQ045 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for low voltage
output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
PRODUCT SUMMARY
Package PowerTab
®
I
F(AV)
175 A
V
R
45 V
V
F
at I
F
0.7 V
I
RM
640 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
40 mJ
Cathode Anode
PowerTab
®
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 175 A
T
C
103 °C
V
RRM
45 V
I
FSM
t
p
= 5 μs sine 8700 A
V
F
175 A
pk
(typical) 0.63 V
T
J
150 °C
T
J
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 175BGQ045 UNITS
Maximum DC reverse voltage V
R
45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
50 % duty cycle at T
C
= 103 °C, rectangular waveform 175 A
Maximum peak one cycle
non-repetitive surge current
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
8700
A
10 ms sine or 6 ms rect. pulse 1550
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 6 A, L = 2 mH 40 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
6A