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VS-175BGQ045 www.vishay.com Vishay Semiconductors Schottky Rectifier, 175 A FEATURES • 150 °C max.
VS-175BGQ045 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 100 A VFM (1) Forward voltage drop TJ = 25 °C 175 A 100 A TJ = 150 °C 175 A TJ = 150 °C, VR = 45 V IRM (1) Reverse leakage current TJ = 25 °C VR = Rated VR TJ = 125 °C Maximum junction capacitance CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance LS Measured from tab to mounting plane Maximum voltage rate of change dV/dt TYP. MAX. 0.55 0.
VS-175BGQ045 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 0 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 D = 0.75 D = 0.5 D = 0.33 D = 0.25 0.1 D = 0.2 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) 200 160 140 120 Average Power Loss (W) Allowable Case Temperature (°C) Fig.
VS-175BGQ045 IFSM - Non-Repetitive Surge Current (A) www.vishay.com Vishay Semiconductors 10 000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge 1000 10 100 1000 10 000 t - Square Wave Pulse Duration (μs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig.
Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® 15.90 (0.62) 15.60 (0.61) 1.35 (0.05) 1.20 (0.04) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 4.95 (0.19) 4.75 (0.18) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.20 (0.20) 4.95 (0.19) Lead 2 3.09 (0.12) 3.00 (0.11) 5.45 REF. (0.21 REF.) 0.60 (0.02) 0.40 (0.01) 39.8 (1.56) 39.6 (1.55) 12.10 (0.47) 12.40 (0.48) Lead 1 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 18.25 (0.71) 18.00 (0.70) 4.20 (0.16) 4.00 (0.15) 8.45 (0.33) 8.20 (0.
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