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VS-40MT1.0P.PbF, VS-70MT1.0P.PbF, VS-100MT1.0P.PbF Series www.vishay.com Vishay Semiconductors Three Phase Bridge (Power Modules), 45 A to 100 A FEATURES • • • • • • • • • MT...PA MT...
VS-40MT1.0P.PbF, VS-70MT1.0P.PbF, VS-100MT1.0P.PbF Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER Maximum DC output current at case temperature SYMBOL IO TEST CONDITIONS 120° rect. to conduction angle t = 10 ms Maximum peak, one cycle forward, non-repetitive on state surge current IFSM No voltage reapplied t = 8.3 ms t = 10 ms 100 % VRRM reapplied t = 8.3 ms t = 10 ms Maximum I2t for fusing I 2t No voltage reapplied t = 8.
VS-40MT1.0P.PbF, VS-70MT1.0P.PbF, VS-100MT1.0P.PbF Series 160 Vishay Semiconductors 40MT...P R thJC (DC) = 0.27 K/W Per Module 150 140 130 120 120˚ (Rect) 110 100 90 80 0 10 20 30 40 250 Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) www.vishay.com 200 150 100 40MT...P Per Junction 50 50 1 Fig. 1 - Current Rating Characteristics Tj = 150˚C 10 40MT...
VS-40MT1.0P.PbF, VS-70MT1.0P.PbF, VS-100MT1.0P.PbF Series Vishay Semiconductors 160 Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) www.vishay.com 70MT...P R thJC (DC) = 0.23 K/W Per Module 150 140 130 120 110 120˚ (Rect) 100 90 80 70 60 0 250 200 150 100 1 Tj = 150˚C 100 10 70MT...P 1 3 400 Peak Half Sine Wave On-state Current (A) Tj = 25˚C 2 10 100 Fig. 8 - Maximum Non-Repetitive Surge Current 1000 1 70MT...
VS-40MT1.0P.PbF, VS-70MT1.0P.PbF, VS-100MT1.0P.PbF Series Vishay Semiconductors 140 Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) www.vishay.com 100MT...P R thJC (DC) = 0.19 K/W 120 Per Module 100 80 120˚ (Rect) 60 40 40 50 60 70 80 90 100 110 120 130 Peak Half Sine Wave On-state Current (A) Instantaneous On-state Current (A) 100MT...P 100 10 Tj = 150˚C Tj = 25˚C 2 2.5 3 300 250 200 100MT...P Per Junction 150 100 10 100 Fig.
VS-40MT1.0P.PbF, VS-70MT1.0P.PbF, VS-100MT1.0P.PbF Series Transient Thermal Impedance Z thJC (K/W) www.vishay.com Vishay Semiconductors 10 Steady State Value RthJC per junction = 1.6 K/W (40MT...P) 1 1.38 K/W (70MT...P 1.14 K/W (100MT...P) 40MT...P 70MT...P 100MT...P DC Operation) 0.1 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig.
Outline Dimensions Vishay Semiconductors MTP Flat and Round Pin DIMENSIONS FOR MTP WITH FLAT PIN in millimeters 14 7 Electrical circuit 2 42 ± 0.1 3, 4 4 5 6 7 12 2.5 1, 2 44.5 7 7 7 7.4 7 22 Ø 5.2 (x 2) 22 1 6 5 7 14 14 39.5 1.3 27.5 2 3 32.5 ± 0.5 0.5 4 0.5 5.5 5.5 Ø5 16 10.5 12 ± 0.5 48.7 63.5 ± 0.25 Document Number: 95244 Revision: 07-Nov-07 For technical questions, contact: indmodules@vishay.com www.vishay.
Outline Dimensions MTP Flat and Round Pin Vishay Semiconductors DIMENSIONS FOR MTP WITH ROUND PIN in millimeters 14 Ø5 7 4 Electrical circuit 7 20.5 ± 0.1 3, 4 12 2.5 5 6 7 1, 2 44.5 7 7 7 Ø 1.1 7 5 6 14 4 10.5 1 32.5 ± 0.1 2 27.5 3 22 4 12 ± 0.5 Ø5 Ø 5.2 (x 2) 16 7 14 7.4 31.8 1.3 39.5 48.7 63.5 ± 0.25 www.vishay.com 2 For technical questions, contact: indmodules@vishay.
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