Owner's manual

VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Revision: 01-Mar-12
1
Document Number: 93412
For technical questions, contact: indmodules@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Primary MTP IGBT Power Module
FEATURES
Buck PFC stage with warp 2 IGBT and FRED Pt
®
hyperfast diode
Integrated thermistor
Isolated baseplate
Compliant to RoHS Directive 2011/65/EU
Very low stray inductance design for high speed operation
Designed and qualified for industrial level
BENEFITS
Lower conduction losses and switching losses
Higher switching frequency up to 150 kHz
Optimized for welding, UPS, and SMPS applications
PCB solderable terminals
Direct mounting to heatsink
PRODUCT SUMMARY
FRED Pt
®
AP DIODE, T
J
= 150 °C
V
RRM
600 V
I
F(DC)
at 80 °C 11 A
V
F
at 25 °C at 60 A 2.08 V
IGBT, T
J
= 150 °C
V
CES
600 V
V
CE(ON)
at 25 °C at 60 A 1.98 V
I
C
at 80°C 83 A
FRED Pt
®
CHOPPER DIODE, T
J
= 150 °C
V
R
600 V
I
F(DC)
at 80 °C 17 A
V
F
at 25 °C at 60 A 2.06 V
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
FRED Pt
Antiparallel
Diode
Repetitive peak reverse voltage V
RRM
600 V
Maximum continuous forward current
T
J
= 150 °C maximum
I
F(DC)
T
C
= 25 °C 17
A
T
C
= 80 °C 11
Maximum power dissipation P
D
T
C
= 25 °C 25 W
IGBT
Collector to emitter voltage V
CES
T
J
= 25 °C 600 V
Gate to emitter voltage V
GE
I
GES
max. ± 250 ns ± 20 V
Maximum continuous collector current
at V
GE
= 15 V, T
J
= 150 °C maximum
I
C
T
C
= 25 °C 121
AT
C
= 80 °C 83
Clamped inductive load current I
LM
300
Maximum power dissipation P
D
T
C
= 25 °C 462 W
FRED Pt
Chopper Diode
Repetitive peak reverse voltage V
RRM
600 V
Maximum continuous forward current
T
J
= 150 °C maximum
I
F
T
C
= 25 °C 26
A
T
C
= 80 °C 17
Maximum power dissipation P
D
T
C
= 25 °C 56 W
Maximum operating junction temperature T
J
150
°C
Storage temperature range T
Stg
- 40 to + 150
Isolation voltage V
ISOL
V
RMS
t = 1 s, T
J
= 25 °C 3500 V