Owner's manual

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Document Number: 93756
2 Revision: 03-Jun-08
T..RIA Series
Vishay High Power Products
Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS T50RIA T70RIA T90RIA UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction, half sine wave
50 70 90 A
70 70 70 °C
Maximum RMS on-state current I
T(RMS)
80 110 141 A
Maximum peak, one-cycle
on-state, non-repetitive
surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sine half wave,
initial T
J
= T
J
maximum
1310 1660 1780
A
t = 8.3 ms 1370 1740 1870
t = 10 ms
100 % V
RRM
reapplied
1100 1400 1500
t = 8.3 ms 1150 1460 1570
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
8550 13 860 15 900
A
2
s
t = 8.3 ms 7800 12 650 14 500
t = 10 ms
100 % V
RRM
reapplied
6050 9800 11 250
t = 8.3 ms 5520 8950 10 270
Maximum I
2
√t for fusing I
2
√t t = 0.1 to 10 ms, no voltage reapplied 85 500 138 500 159 100 A
2
√s
Low level value of
threshold voltage
V
T(TO)1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
maximum 0.97 0.77 0.78
V
High level value of
threshold voltage
V
T(TO)2
(I > π x I
T(AV)
), T
J
maximum 1.13 0.88 0.88
Low level value of
on-state slope resistance
r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
maximum 4.1 3.6 2.9
mΩ
High level value of
on-state slope resistance
r
t2
(I > π x I
T(AV)
), T
J
maximum 3.3 3.2 2.6
Maximum on-state voltage drop V
TM
I
TM
= π x I
T(AV)
, T
J
= 25 °C, t
p
= 400 µs square
Average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
1.60 1.55 1.55 V
Maximum forward voltage drop V
FM
I
TM
= π x I
T(AV)
, T
J
= 25 °C, t
p
= 400 µs square
Average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
1.60 1.55 1.55 V
Maximum holding current I
H
Anode supply = 6 V, initial I
T
= 30 A, T
J
= 25 °C 200 200 200
mA
Maximum latching current I
L
Anode supply = 6 V, resistive load = 10 Ω
Gate pulse: 10 V, 100 µs, T
J
= 25 °C
400 400 400
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t
gd
T
J
= 25 °C, V
d
= 50 % V
DRM
, I
TM
= 50 A
I
g
= 500 mA, t
r
≤ 0.5, t
p
≥ 6 µs
0.9
µsTypical reverse recovery time t
rr
T
J
= 125 °C, I
TM
= 50 A, t
p
= 300 µs, dI/dt = 10 A/µs 3
Typical turn-off time t
q
T
J
= T
J
maximum, I
TM
= 50 A, t
p
= 300 µs
-dI/dt = 15 A/µs, V
R
= 100 V, linear to 80 % V
DRM
110