Owner manual

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, [e-mail], [e-mail] Revision: 19-May-10
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Fig. 25 - Recovery Time Characteristics
Fig. 26 - Recovery Charge Characteristics
Fig. 27 - Recovery Current Characteristics
Fig. 28 - Recovery Time Characteristics
Fig. 29 - Recovery Charge Characteristics
Fig. 30 - Recovery Current Characteristics
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
00101
100A
50A
200A
Maximum Reverse Recovery Time - Trr (µs)
Rate Of Fall Of Forward Current - di/d t (A/µs)
I = 300A
FM
T4 0 H FL. . S 1 0
T7 0 H FL. . S 1 0
T = 125 °C
J
5
10
15
20
25
30
35
40
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
Maximum Reverse Re covery Cha rg e - Qrr (µC)
Ra te Of Fa ll Of Fo rward Current - d i/ d t (A/ µs)
I = 300A
FM
T4 0 H F L . . S1 0
T7 0 H F L . . S1 0
T = 1 2 5 ° C
J
10
15
20
25
30
35
40
45
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
Maximum Reverse Rec overy Current - Irr (A)
Ra te Of Fa ll Of Forward Current - di/ d t (A/ µs)
I = 300A
FM
T4 0 H F L . . S1 0
T7 0 H F L . . S1 0
T = 1 2 5 ° C
J
0.6
0.7
0.8
0.9
1
1.1
1.2
00101
100A
50A
200A
Ma ximum Rev erse Re c ove ry Tim e - Trr ( µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
T8 5 H F L . . S0 2
T = 1 2 5 ° C
I = 300A
J
FM
5
10
15
20
25
10 20 30 40 50 60 70 80 90 100
200A
100A
50A
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
T8 5 H F L . . S0 2
T = 1 2 5 ° C
I = 300A
J
FM
6
8
10
12
14
16
18
20
22
24
26
28
10 20 30 40 50 60 70 80 90 100
200A
100A
50A
Maxim um Reve rse Rec o ve ry C urre nt - Irr (A)
Ra t e O f Fa l l O f Fo r w a r d C u r r e n t - d i / d t ( A / µ s)
T8 5 H F L . . S0 2
T = 125°C
I = 300A
J
FM