Owner manual

Document Number: 93184 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-May-10 [e-mail]
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T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Vishay Semiconductors
Fig. 19 - Recovery Time Characteristics
Fig. 20 - Recovery Charge Characteristics
Fig. 21 - Recovery Current Characteristics
Fig. 22 - Recovery Time Characteristics
Fig. 23 - Recovery Charge Characteristics
Fig. 24 - Recovery Current Characteristics
0.45
0.46
0.47
0.48
0.49
0.5
0.51
00101
100A
220A
172A
50A
Rate Of Fa ll Of Forwa rd Current - di/ d t (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
I = 300A
FM
T4 0 H F L . . S0 2
T7 0 H F L . . S0 2
T = 1 2 5 ° C
J
1
2
3
4
5
6
7
8
10 20 30 40 50 60 70 80 90 100
100A
220A
172A
50A
Rate Of Fall Of Forward Current - di/dt (A/µs)
Ma xim um Re verse Re c o ve ry Cha rg e - Qrr (µC)
I = 300A
FM
T4 0 H F L . . S0 2
T7 0 H F L . . S0 2
T = 1 2 5 ° C
J
4
6
8
10
12
14
16
18
20
10 20 30 40 50 60 70 80 90 100
100A
220A
172A
50A
Rate Of Fall Of Forward Current - di/ d t (A/µs)
Maximum Reverse Recovery Current - Irr (A)
I = 300A
T4 0 HF L. . S0 2
T7 0 HF L. . S0 2
T = 1 2 5 ° C
FM
J
0.6
0.7
0.8
0.9
1
1.1
00101
100A
220A
172A
50A
Maximum Reverse Rec overy Time - Trr (µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 300A
FM
T4 0 HF L. . S0 5
T7 0 HF L. . S0 5
T = 1 2 5 ° C
J
4
6
8
10
12
14
16
18
20
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Forward Current - di/ d t (A/ µs)
Maximum Reverse Recovery Charge - Qrr (µC)
220A
172A
100A
50A
I = 300A
FM
T4 0 H F L . . S0 5
T7 0 H F L . . S0 5
T = 1 2 5 ° C
J
6
8
10
12
14
16
18
20
22
24
26
28
10 20 30 40 50 60 70 80 90 100
220A
172A
100A
50A
M aximum Reve rse Rec o ve ry Curre n t - Irr ( A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 300A
FM
T4 0 H FL. . S 0 5
T7 0 H FL. . S 0 5
T = 125 °C
J