Owner manual

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, [e-mail], [e-mail] Revision: 19-May-10
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
t
rr
CODE
V
RRM,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM
MAXIMUM
AT T
J
= 25 °C
μA
T40HFL..
T70HFL..
T85HFL..
10 S02, S05, S10 100 150
100
20 S02, S05, S10 200 300
40 S02, S05, S10 400 500
60 S02, S05, S10 600 700
80 S05, S10 800 900
100 S05, S10 1000 1100
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS
Maximum average
forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
40 70 85 A
70 °C
Maximum RMS
forward current
I
F(RMS)
63 110 133 A
Maximum peak, one-cycle
forward, non-repetitive
surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
475 830 1300
A
t = 8.3 ms 500 870 1370
t = 10 ms
100 % V
RRM
reapplied
400 700 1100
t = 8.3 ms 420 730 1150
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
1130 3460 8550
A
2
s
t = 8.3 ms 1030 3160 7810
t = 10 ms
100 % V
RRM
reapplied
800 2450 6050
t = 8.3 ms 730 2230 5520
Maximum I
2
√t for fusing I
2
√t t = 0.1 ms to 10 ms, no voltage reapplied 11 300 34 600 85 500 A
2
√s
Low level value of
threshold voltage
V
F(TO)1
T
J
= 25 °C, (16.7 % x π x I
F(AV)
< I < π x I
F(AV)
) 0.82 0.87 0.84
V
High level value of
threshold voltage
V
F(TO)2
T
J
= 25 °C, (I > π x I
F(AV)
) 0.84 0.90 0.86
Low level value of forward
slope resistance
r
f1
T
J
= 25 °C, (16.7 % x π x I
F(AV)
< I < π x I
F(AV)
) 7.0 2.77 2.15
mΩ
High level value of forward
slope resistance
r
f2
T
J
= 25 °C, (I > π x I
F(AV)
) 6.8 2.67 2.07
Maximum forward
voltage drop
V
FM
I
FM
= π x I
F(AV)
, T
J
= 25 °C, t
p
= 400 μs square wave
Average power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
1.60 1.73 1.55 V