Owner manual

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, [e-mail], [e-mail] Revision: 19-May-10
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Fig. 37 - Frequency Characteristics
Fig. 38 - Frequency Characteristics
Fig. 39 - Maximum Forward Energy Power Loss Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E
4
50 Hz
400
1000
200
1500
2500
10000
20000
5000
Peak Forward Current (A)
Pu lse Ba se w id t h ( µ s)
tp
1E4
T4 0 H F L. . Se r i e s
Si n u so i d a l Pu l se
T = 70°C
C
1
E1 1 E2 1 E3 1 E4
50 Hz 400
1000
200
1500
2500 5000
Pulse Ba se w id t h ( µs)
T4 0 HFL . . Series
Tr a p e z o i d a l P u l se
T = 7 0 ° C
C
tp
1E1
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz4001000
200
15002500
1000020000
5000
Peak Forward Current (A)
Pulse Basewidth (µs)
tp
1E4
Si n u so i d a l P u l se
T = 90°C
C
T40HFL.. Series
E1 1 E2 1 E3 1 E4
50 Hz
400
1000
200
1500
2500
5000
Pu lse Ba se w id t h ( µ s)
Tr a p e zo i d a l P u l se
tp
T4 0 H FL . .
1E1
T = 9 0 ° C
C
1E0
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E
4
0.01
0.02
0.04
0.1
0.2
0.4
1
2
4
10
20 joule s p er pulse
Peak Forward Current (A)
Pulse Basewidth (µs)
tp
1E4
T40HFL.. Series
Sinuso id al Pulse
T = 125 °C
J
1
E1 1 E2 1 E3 1 E4
0.01
0.02
0.04
0.1
0.2
0.4
1
2
4
10
20 joules per pulse
Tr a p e z o i d a l Pu l se
Pu lse Ba se w i d t h ( µ s)
T40HFL.. Se ries
T = 125°C
di/dt = 50A/µs
1E1
tp
J