Owner manual

Document Number: 93184 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-May-10 [e-mail]
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T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Vishay Semiconductors
Fig. 31 - Recovery Time Characteristics
Fig. 32 - Recovery Charge Characteristics
Fig. 33 - Recovery Current Characteristics
Fig. 34 - Recovery Time Characteristics
Fig. 35 - Recovery Charge Characteristics
Fig. 36 - Recovery Current Characteristics
0.8
0.9
1
1.1
1.2
1.3
00101
100A
50A
200A
Ma ximum Reverse Rec overy Time - Trr (µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 300A
T8 5 H F L . . S0 5
T = 1 2 5 ° C
FM
J
6
9
12
15
18
21
24
27
30
10 20 30 40 50 60 70 80 90 100
200A
Maximum Reverse Recovery Charge - Qrr (µC)
Ra t e O f Fa l l O f Fo r w a rd C u r r e n t - d i / d t ( A / µ s)
T8 5 H F L . . S0 5
T = 1 2 5 ° C
100A
50A
J
I = 300A
FM
10
15
20
25
30
35
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
Maximum Reverse Rec overy Current - Irr (A)
Ra t e O f Fa l l O f Fo rw a r d C u r r e n t - d i / d t ( A / µ s)
T8 5 H F L . . S0 5
T = 125°C
I = 300A
J
FM
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
00101
100A
50A
200A
Maximum Reverse Recovery Time - Trr (µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
T8 5 H F L . . S1 0
T = 125°C
I = 300A
J
FM
10
15
20
25
30
35
40
45
50
55
10 20 30 40 50 60 70 80 90 100
200A
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
100A
50A
T8 5 H F L . . S1 0
T = 125°C
J
I = 300A
FM
15
20
25
30
35
40
45
50
55
60
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
Ma ximum Reve rse Rec overy Current - Irr (A)
I = 300A
T8 5 H FL. . S 1 0
T = 125°C
Rate Of Fall Of Forward Current - di/dt (A/µs)
FM
J