6121 Baker Road, Suite 108 Minnetonka, MN 55345 Phone (952) 933-6190 Fax (952) 933-6223 1-800-274-4284 www.chtechnology.com Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team for the following questions - Technical Application Assembly Availability Pricing Phone – 1-800-274-4284 E-Mail – sales@chtechnology.com www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.
T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A FEATURES • Fast recovery time characteristics • Electrically isolated base plate • 3500 VRMS isolating voltage • Standard JEDEC package • Simplified mechanical designs, rapid assembly • Large creepage distances • UL E78996 approved D-55 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION The series of T-modules uses fast recovery power diodes in a single diod
T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE trr CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 10 S02, S05, S10 100 150 20 S02, S05, S10 200 300 40 S02, S05, S10 400 500 60 S02, S05, S10 600 700 80 S05, S10 800 900 100 S05, S10 1000 1100 T40HFL.. T70HFL.. T85HFL..
T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Vishay Semiconductors REVERSE RECOVERY CHARACTERISTICS PARAMETER SYMBOL Maximum reverse recovery time Maximum reverse recovery charge trr Qrr T40HFL TEST CONDITIONS (1) T70HFL T85HFL S02 S05 S10 S02 S05 S10 S02 S05 S10 TJ = 25 °C, -dIF/dt = 100 A/μs IF = 1 A to VR = 30 V 70 110 270 70 110 270 80 120 290 TJ = 25 °C, -dIF/dt = 25 A/μs IFM = π x rated IF(AV), VR = - 30 V 200 500 1000 200 500 1000
T40HFL, T70HFL, T85HFL Series T40HFL.. Series R thJC (DC) = 0.85 K/ W 120 110 100 Conduc tion Angle 90 80 30° 70 60° 90° 60 120° 180° 50 0 10 20 30 40 50 130 T70HFL.. Series RthJC (DC) = 0.53 K/ W 120 110 100 Conduction Period 90 80 30° 70 60° 90° 120° 60 180° DC 50 0 20 40 60 80 100 120 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 130 T40HFL.. Series R thJC (DC) = 0.
T40HFL, T70HFL, T85HFL Series 180° 120° 90° 60° 30° 60 50 RMSLimit 40 30 20 Conduc tion Angle 10 T40HFL.. Series TJ= 125°C 0 0 5 10 15 20 25 30 35 Maximum Average Forward Power Loss (W) 70 Vishay Semiconductors 140 DC 180° 120° 90° 60° 30° 120 100 80 RMS Limit 60 Conduc tion Period 40 T70HFL.. Series TJ = 125°C 20 0 0 40 20 40 60 80 100 120 Average Forward Current (A) Fig. 7 - Forward Power Loss Characteristics Fig.
T40HFL, T70HFL, T85HFL Series 450 Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A At Any Ra ted Loa d Cond ition And With Rated V RRM App lied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 400 350 300 250 200 150 T40HFL.. Series 100 1 10 850 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forwa rd Current (A) Vishay Semiconductors Maximum Non Repetitive Surge Current Versus Pulse Train Duration.
T40HFL, T70HFL, T85HFL Series Maximum Reverse Rec overy Time - Trr (µs) 0.51 0.5 I FM= 300A 0.49 220A 172A 0.48 100A 50A 0.47 T40HFL..S02 T70HFL..S02 TJ = 125 °C 0.45 10 100 Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs) Maximum Reverse Rec overy Charge - Qrr (µC) Fig. 19 - Recovery Time Characteristics 8 7 6 I FM= 300A 220A 172A 100A 50A 5 4 3 T40HFL..S02 T70HFL..
T40HFL, T70HFL, T85HFL Series Maximum Reverse Rec overy Time - Trr (µs) 1.8 1.7 I FM= 300A 1.6 200A 1.5 100A 1.4 50A 1.3 1.2 1.1 T40HFL..S10 T70HFL..S10 TJ = 125 °C 1 10 Maximum Reverse Recovery Time - Trr (µs) Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Vishay Semiconductors 100 1.2 1.1 1 IFM = 300A 0.9 200A 100A 0.8 50A 0.7 T85HFL..S02 T J = 125°C 0.6 10 100 Fig. 25 - Recovery Time Characteristics Fig.
T40HFL, T70HFL, T85HFL Series 1.3 1.2 IFM = 300A 1.1 200A 1 100A 50A 0.9 T85HFL..S05 TJ = 125°C 0.8 10 Maximum Reverse Rec overy Time - Trr (µs) Maximum Reverse Rec overy Time - Trr (µs) Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A 100 Vishay Semiconductors 2 1.9 1.8 IFM = 300A 1.7 1.6 200A 1.5 100A 1.4 1.3 1.2 1.1 50A T85HFL..S10 TJ = 125°C 1 10 100 Fig. 31 - Recovery Time Characteristics Fig.
T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Vishay Semiconductors Peak Forward Current (A) 1E4 tp T40HFL.. Series Trapezoidal Pulse T C = 70 °C 1E3 1E2 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 2500 1500 1000 tp 1E1 1E1 400 200 50 Hz T40HFL.. Series Sinusoidal Pulse T = 70°C C 1E2 1E1 1E4 1E1 1E4 1E3 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 37 - Frequency Characteristics 1E4 Peak Forward Current (A) tp T40HFL..
T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Vishay Semiconductors Peak Forward Current (A) 1E4 1E3 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 1E2 tp 1E1 1E1 T70HFL.. Series Sinusoid a l Pulse TC= 70°C tp 1E2 400 200 50 Hz T70HFL.. Series Trapezoidal Pulse TC= 70°C 1E1 1 1E41E 1E4 1E3 2500 1500 1000 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig.
T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Peak Forward Current (A) 1E4 1E3 20000 10000 400 5000 2500 1500 1000 200 50 Hz 5000 2500 1500 1000 400 200 50 Hz 1E2 tp T85HFL.. Series Sinusoidal Pulse TC= 70°C 1E1 1E1 1E2 tp 1E4 1E41E1 1E1 1E3 T85HFL.. Series Trapezoidal Pulse T C= 70°C 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig.
T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A 10000 Instanta neous Forwa rd Current (A) Instantaneous Forward Current (A) 1000 100 TJ= 25°C TJ= 125°C 10 T40HFL.. Series 1 0.5 Vishay Semiconductors 1000 100 TJ= 25°C TJ= 125°C 10 T70HFL.. Series 1 1 1.5 2 2.5 3 3.5 4 4.5 0 1 2 3 4 5 6 7 Instantaneous Forward Voltage (V) Instantaneous Forward Voltage (V) Fig. 46 - Forward Voltage Drop Characteristics Fig.
T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A ORDERING INFORMATION TABLE Device code T 40 HFL 100 S10 1 2 3 4 5 1 - Module type 2 - Current rating 3 - Fast recovery diode 4 - Voltage code x 10 = VRRM 5 - trr code 40 = 40 A (average) 70 = 70 A (average) 85 = 85 A (average) S02 = 200 ns S05 = 500 ns S10 = 1000 ns CIRCUIT CONFIGURATION CIRCUIT Single switch diode CIRCUIT CONFIGURATION CODE N/A CIRCUIT DRAWING + - LINKS TO
Outline Dimensions Vishay Semiconductors D-55 T-Module Diode Standard and Fast Recovery DIMENSIONS in millimeters (inches) 25 ± 1 23.5 (0.93) 3 (0.12) 41 (1.61) MAX. 11 (0.43) 18 (0.71) + 27 (1.06) 15 (0.59) 3.9 (0.15) 8 (0.31) - M5 30 (1.18) Document Number: 95313 Revision: 01-Jul-08 For technical questions, contact: indmodules@vishay.com www.vishay.
Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
