Owner's manual
Document Number: 94375 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 30-Apr-08 7
ST303SPbF Series
Inverter Grade Thyristors
(Stud Version), 300 A
Vishay High Power Products
Fig. 13 - Frequency Characteristics
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
1E0
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
200
Pu l se Ba se w id t h ( µ s)
Peak On-state Current (A)
2000
Snub ber circuit
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
D
DRM
ST3 0 3 S Se r i e s
Trapezoidal pulse
T = 4 0 ° C
d i/ d t = 100A/ µs
C
tp
500
1 E1 1 E2 1 E3 1 E4
50 Hz
400
100
1000
1500
200
Pu l se Ba se w id t h ( µ s)
ST3 0 3S Series
Trapezoidal pulse
T = 6 5 ° C
di/ d t = 100A/ µs
C
Sn u b b e r c i r c u i t
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D
DRM
2000
tp
500
1E1
1E2
1E3
1E4
1E5
1 E1 1 E2 1 E3 1 E4
Pulse Ba se w id th ( µs)
20 joules p er pulse
2
1
Peak On-state Current (A)
0.5
10
5
3
0.4
ST3 0 3 S Se r i e s
Sinusoid al pulse
tp
1E1 1E2 1E3 1E4
Pulse Ba se w id t h ( µs)
20 joule s p er pu lse
2
1
0.5
10
5
ST3 0 3 S Se ri e s
Rectangular pulse
di/dt = 50A/µs
tp
3
0.4
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 1 2 5 ° C
Tj= - 4 0 ° C
(1)
(2)
Insta nt a ne ous Ga te Current (A)
Insta nt aneo us Ga te Volta g e ( V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
rated d i/ dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
De vic e: ST303S Series
(4)
Frequency Limited by PG(AV)