Owner's manual

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Document Number: 94406
2 Revision: 06-May-08
ST300SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 300 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction, half sine wave 300 A
75 °C
Maximum RMS on-state current I
T(RMS)
DC at 64 °C case temperature 470
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
8000
t = 8.3 ms 8380
t = 10 ms
100 % V
RRM
reapplied
6730
t = 8.3 ms 7040
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
320
kA
2
s
t = 8.3 ms 292
t = 10 ms
100 % V
RRM
reapplied
226
t = 8.3 ms 207
Maximum I
2
√t for fusing I
2
√t t = 0.1 to 10 ms, no voltage reapplied 3200 kA
2
√s
Low level value of threshold voltage V
T(TO)1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.97
V
High level value of threshold voltage V
T(TO)2
(I > π x I
T(AV)
), T
J
= T
J
maximum 0.98
Low level value of on-state slope resistance r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.74
mΩ
High level value of on-state slope resistance r
t2
(I > π x I
T(AV)
), T
J
= T
J
maximum 0.73
Maximum on-state voltage V
TM
I
pk
= 940 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse 1.66 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 12 V resistive load
600
mA
Typical latching current I
L
1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
dIdt
Gate drive 20 V, 20 Ω, t
r
≤ 1 µs
T
J
= T
J
maximum, anode voltage ≤ 80 % V
DRM
1000 A/µs
Typical delay time t
d
Gate current 1 A, dI
g
/dt = 1 A/µs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
1.0
µs
Typical turn-off time t
q
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/µs,
V
R
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, t
p
= 500 µs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt T
J
= T
J
maximum linear to 80 % rated V
DRM
500 V/µs
Maximum peak reverse and
off-state leakage current
I
RRM
,
I
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied 30 mA