Manual

www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94370
2 Revision: 30-Apr-08
ST203CPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 860 750 1340 1160 5620 5020
A
400 Hz 840 706 1400 1220 2940 2590
1000 Hz 700 580 1350 1170 1750 1520
2500 Hz 430 340 980 830 910 780
Recovery voltage V
r
50 50 50
V
Voltage before turn-on V
d
V
DRM
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
I
T(AV)
180° conduction, half sine wave
double side (single side) cooled
370 (140) A
55 (85) °C
Maximum RMS on-state current I
T(RMS)
DC at 25 °C heatsink temperature double side cooled 700
A
Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
5260
t = 8.3 ms 5510
t = 10 ms
100 % V
RRM
reapplied
4420
t = 8.3 ms 4630
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
138
kA
2
s
t = 8.3 ms 126
t = 10 ms
100 % V
RRM
reapplied
98
t = 8.3 ms 89
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 1380 kA
2
s
Maximum peak on-state voltage V
TM
I
TM
= 600 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
1.72
V
Low level value of threshold voltage V
T(TO)1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 1.17
High level value of threshold voltage V
T(TO)2
(I > π x I
T(AV)
), T
J
= T
J
maximum 1.22
Low level value of forward slope resistance r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.92
mΩ
High level value of forward slope resistance r
t2
(I > π x I
T(AV)
), T
J
= T
J
maximum 0.83
Maximum holding current I
H
T
J
= 25 °C, I
T
> 30 A 600
mA
Typical latching current I
L
T
J
= 25 °C, V
A
= 12 V, R
a
= 6 Ω, I
G
= 1 A 1000
180° el
I
TM
180° el
I
TM
100 µs
I
TM