Instruction Manual

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Document Number: 94366
2 Revision: 29-Apr-08
ST173CPBF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 330 A
CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 760 660 1200 1030 5570 4920
A
400 Hz 730 590 1260 1080 2800 2460
1000 Hz 600 490 1200 1030 1620 1390
2500 Hz 350 270 850 720 800 680
Recovery voltage V
r
50 50 50
V
Voltage before turn-on V
d
V
DRM
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
I
T(AV)
180° conduction, half sine wave
double side (single side) cooled
330 (120) A
55 (85) °C
Maximum RMS on-state current I
T(RMS)
DC at 25 °C heatsink temperature double side cooled 610
A
Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
4680
t = 8.3 ms 4900
t = 10 ms
100 % V
RRM
reapplied
3940
t = 8.3 ms 4120
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
110
kA
2
s
t = 8.3 ms 100
t = 10 ms
100 % V
RRM
reapplied
77
t = 8.3 ms 71
Maximum I
2
√t for fusing I
2
√t t = 0.1 to 10 ms, no voltage reapplied 1100 kA
2
√s
Maximum peak on-state voltage V
TM
I
TM
= 600 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
2.07
V
Low level value of threshold voltage V
T(TO)1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 1.55
High level value of threshold voltage V
T(TO)2
(I > π x I
T(AV)
), T
J
= T
J
maximum 1.61
Low level value of forward slope resistance r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.87
mΩ
High level value of forward slope resistance r
t2
(I > π x I
T(AV)
), T
J
= T
J
maximum 0.77
Maximum holding current I
H
T
J
= 25 °C, I
T
> 30 A 600
mA
Typical latching current I
L
T
J
= 25 °C, V
A
= 12 V, R
a
= 6 Ω, I
G
= 1 A 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate
of rise of turned on current
dI/dt T
J
= T
J
maximum, V
DRM
= Rated V
DRM
, I
TM
= 2 x dI/dt 1000 A/µs
Typical delay time t
d
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source
1.1
µs
Maximum turn-off time
minimum
t
q
T
J
= T
J
maximum,
I
TM
= 300 A, commutating dI/dt = 20 A/µs
V
R
= 50 V, t
p
= 500 µs, dV/dt: See table in device code
15
maximum 30
180° el
I
TM
180° el
I
TM
100 µs
I
TM