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SD300N/R Series Vishay Semiconductors Standard Recovery Diodes (Stud Version), 380 A FEATURES • Wide current range • High voltage ratings up to 3200 V RoHS • High surge current capabilities COMPLIANT • Stud cathode and stud anode version • Standard JEDEC types • Compression bonded encapsulations DO-205AB (DO-9) • Lead (Pb)-free • Designed and qualified for industrial level TYPICAL APPLICATIONS • Converters PRODUCT SUMMARY IF(AV) • Power supplies 380 A • Machine tool controls • High power drives
SD300N/R Series Standard Recovery Diodes (Stud Version), 380 A Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at TC = 88 °C (02 to 24), TC = 91 °C (25 to 32) t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.
SD300N/R Series Standard Recovery Diodes (Stud Version), 380 A Vishay Semiconductors RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.019 0.013 120° 0.023 0.023 90° 0.028 0.030 60° 0.042 0.044 30° 0.073 0.074 TEST CONDITIONS UNITS TJ = TJ maximum K/W SD300N/ RSeries(1600V to 2000V) RthJC (DC) = 0.
SD300N/R Series Standard Recovery Diodes (Stud Version), 380 A 700 R th K/ W SA = 3 0.0 W K/ 0.2 K/ W a R RMSLimit 400 elt -D 500 0. 1 W K/ 180° 120° 90° 60° 30° 600 06 0. Maximum Average Forward Power Loss(W) Vishay Semiconductors 0.4 K/ W 300 Conduc tion Angle 200 SD300N/ R Series (1600V to 2000V) TJ = 180°C 100 0.6 K / W 0.
SD300N/R Series Vishay Semiconductors 900 DC 180° 120° 90° 60° 30° 800 700 600 R SA th Maximum Average Forward Pow er Loss (W) Standard Recovery Diodes (Stud Version), 380 A 500 RMS Limit 400 = 0.0 6K /W 0.1 K/ W SD300N/ R Series (2500V to 3200V) TJ = 150°C 200 100 K/ W -D el ta R 0.2 K/ W Conduction Period 300 0. 02 0.4 K /W 0.8 K / W 1.
SD300N/R Series Standard Recovery Diodes (Stud Version), 380 A Transient Thermal Impedance Z thJC (K/ W) Vishay Semiconductors 1 0.1 Steady State Value: RthJC = 0.11 K/ W (DC Operation) 0.01 SD300N/ R Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig.
Outline Dimensions Vishay Semiconductors DO-205AB (DO-9) DIMENSIONS in millimeters (inches) Ceramic housing 19 (0.75) MAX. 4 (0.16) MAX. 39 (1.53) MAX. 9.5 (0.37) MIN. DIA. 8.5 (0.33) NOM. C.S. 35 mm2 (0.054 s.i.) 210 (8.27) ± 10 (0.39) DIA. 27.5 (1.08) MAX. 82 (3.23) MIN. SW 32 16 (0.63) MAX. 21 (0.82) MAX. 3/4"-16UNF-2A* Document Number: 95301 Revision: 09-Apr-08 *For metric device: M16 x 1.5 contact factory For technical questions, contact: indmodules@vishay.com www.vishay.
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