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SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura A K.Kurachi R I.Umezaki E H.Yamaguchi I.Umezaki V 27-Sep.-2006 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200DG-66S 2. Structure Flat base type (Insulated package, AlSiC base plate) 3. Application & Customer High power converters & Inverters for traction application 4. Outline See Fig. 1 5. Related Specifications Fig.
MITSUBISHI ELECTRIC CORPORATION 6. Maximum Ratings Item Symbol Conditions Ratings Unit 6.1 Repetitive peak reverse voltage VRRM Tj = 25 °C 3300 V 6.2 Non-repetitive peak reverse voltage VRSM Tj = 25 °C 3300 V 6.3 Reverse DC voltage VR(DC) Tj = 25 °C 2200 V 6.4 DC forward current IF Tc = 25 °C 1200 A 6.5 Surge forward current IFSM Tj = 25 °C start, tw = 8.3 ms Half sign wave 9600 A 6.6 Surge current load integral I2t Tj = 25 °C start, tw = 8.
MITSUBISHI ELECTRIC CORPORATION 8. Thermal Characteristics Item 8.1 Symbol Thermal resistance Rth(j-c)R Limits Conditions Junction to case (per 1/2 module) Unit Min. Typ. Max. — — 18.0 K/kW — 16.0 — K/kW (Note 2) 8.2 Contact thermal resistance Case to fin Conductive grease applied (per 1/2 module) Rth(c-f) Note 2: Thermal conductivity is 1W/mK with a thickness of 100µm. 9. Mechanical Characteristics Item Symbol Conditions Limits Min. Typ. Max. Unit 9.
MITSUBISHI ELECTRIC CORPORATION 11. Test Circuit & Definition of Switching Characteristics LS1 = 500 nH Rg LLOAD LS2 = 100 nH K C = 2 mF V CC DUT: diode CS = 200 uF A Fig. 1 – Switching test circuit Diode part: reverse recovery Qrr = – IF di/dt ∫ t6 VR trr di 0 Irr 10%IF Erec = – ∫ if dt 0 t6 if•vr dt t5 50%Irr dt 90%Irr 0 10%VR 0 t5 t6 Fig.
MITSUBISHI ELECTRIC CORPORATION 12. Performance curves 12-1 Forward characteristics................................................................................................... 6 12-2 Reverse recovery energy characteristics ...................................................................... 7 12-3 Reverse recovery current characteristics...................................................................... 8 12-4 Transient thermal impedance characteristics .................................
MITSUBISHI ELECTRIC CORPORATION 12-1 Forward characteristics 2400 2200 2000 1800 Forward current IF [A] 1600 1400 1200 1000 800 Tj=125°C 600 Tj=25°C 400 200 0 0 1 2 3 4 5 6 Forward voltage VFM [V] Forward voltage characteristics (typical) HIGH VOLTAGE DIODE MODULE HVM-2010-A (HV-SETSU) PAGE 6 / 11
MITSUBISHI ELECTRIC CORPORATION 12-2 Reverse recovery energy characteristics 1.6 Tj = 125°C, VR = 1650V Ls = 100nH, Inductive load Integration range: 10%VR ~10%IF 1.4 Reverse recovery energy Erec [J/P] 1.2 1.0 0.8 0.6 0.4 0.2 0.
MITSUBISHI ELECTRIC CORPORATION 12-3 Reverse recovery current characteristics 3000 Tj = 125°C, VR = 1650V Ls = 100nH, Inductive load Reverse recovery current Irr [A] 2500 2000 1500 1000 500 0 0 500 1000 1500 2000 2500 Forward current IF [A] Reverse recovery current characteristics (typical) HIGH VOLTAGE DIODE MODULE HVM-2010-A (HV-SETSU) PAGE 8 / 11
MITSUBISHI ELECTRIC CORPORATION 12-4 Transient thermal impedance characteristics 1.2 Rth(j-c) = 18 K/kW Normalized transient thermal impedance 1.0 0.8 0.6 0.4 0.2 0.0 0.001 0.01 0.1 1 10 Time [sec.
MITSUBISHI ELECTRIC CORPORATION 12-5 Reverse recovery safe operating area 3000 Tj = 125°C, VR ≤ 2200 V di/dt ≤ 5400A/µs 2500 Reverse recovery current Irr [A] 2000 1500 1000 500 0 0 1000 2000 3000 4000 Reverse voltage VR [V] Reverse recovery safe operating area (RRSOA) HIGH VOLTAGE DIODE MODULE HVM-2010-A (HV-SETSU) PAGE 10 / 11
MITSUBISHI ELECTRIC CORPORATION Rev. No. − A Signature & date S.Iura 27-Sep.-2006 Summary of changes Original K.Kurachi 31-Jan.
