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MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR Module> PS11011 PS11011 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED TYPE TYPE PS11011 INTEGRATED FUNCTIONS AND FEATURES • Converter bridge for 3 phase AC-to-DC power conversion. • Circuit for dynamic braking of motor regenerative energy. • 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology.
MITSUBISHI SEMICONDUCTOR PS11011 FLAT-BASE TYPE INSULATED TYPE C3 ; 3.3µF or more, tight tolerance, temp-compensated electrolytic type (Note : the value may change depending on the type PWM control scheme used in the applied system) C4 ; 2µF R-category ceramic condenser for noise filtering.
MITSUBISHI SEMICONDUCTOR PS11011 FLAT-BASE TYPE INSULATED TYPE TOTAL SYSTEM Symbol Tj Item Junction temperature T stg TC Storage temperature Module case operating temperature Viso Isolation voltage — Ratings Unit (Note 2) –20 ~ +125 °C (Fig. 3) –40 ~ +125 –20 ~ +100 °C °C 2500 Vrms 0.78 ~ 1.27 kg·cm Condition — 60 Hz sinusoidal AC applied between all terminals and the base plate for 1 minute. Mounting screw: M3.
MITSUBISHI SEMICONDUCTOR PS11011 FLAT-BASE TYPE INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj = 25°C, VDH = 15V, VDB = 15V unless otherwise noted) Symbol IDH Vth(on) Vth(off) Ri fPWM txx tdead tint VCO V C+(200%) Condition Item VDH = 15V, VCIN = 5V Circuit current Input on threshold voltage Input off threshold voltage Input pull-up resistor PWM input frequency Allowable input on-pulse width Allowable input signal dead time for blocking arm shoot-through I
MITSUBISHI SEMICONDUCTOR PS11011 FLAT-BASE TYPE INSULATED TYPE Fig. 4 OUTPUT CURRENT ANALOGUE SIGNALING LINEARITY Fig.
MITSUBISHI SEMICONDUCTOR PS11011 FLAT-BASE TYPE INSULATED TYPE Fig. 8 INVERTER OUTPUT ANALOGUE CURRENT SENSING AND SIGNALING TIMING CHART N-side IGBT Current N-side FWDi Current off VCIN on on V(hold) off IC 0 +ICL (VS) 0 –ICL t(hold) VC Ref 0 off VCL on Delay time td(read) Fig. 9 START-UP SEQUENCE Fig.
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