Manual

Document Number: 94044 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 01-Aug-08 1
HEXFRED
®
Ultrafast Soft Recovery Diode, 210 A
HFA90NH40PbF
Vishay High Power Products
FEATURES
• Very low Q
rr
and t
rr
• Lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced snubbing
DESCRIPTION
HEXFRED
®
diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
PRODUCT SUMMARY
I
F
(maximum) 210 A
V
R
400 V
I
F(DC)
at T
C
106 A at 100 °C
HALF-PAK (D-67)
Lug terminal
anode
Base
cathode
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
400 V
Continuous forward current I
F
T
C
= 25 °C 210
AT
C
= 100 °C 106
Single pulse forward current I
FSM
Limited by junction temperature 600
Non-repetitive avalanche energy E
AS
L = 100 µH, duty cycle limited by maximum T
J
1.4 mJ
Maximum power dissipation P
D
T
C
= 25 °C 329
W
T
C
= 100 °C 132
Operating junction and storage
temperature range
T
J
, T
Stg
- 55 to + 150 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 µA 400 - -
V
Maximum forward voltage V
FM
I
F
= 90 A
See fig. 1
- 1.06 1.45
I
F
= 180 A - 1.2 1.67
I
F
= 90 A, T
J
= 125 °C - 0.96 1.23
Maximum reverse
leakage current
I
RM
T
J
= 125 °C, V
R
= 400 V See fig. 2 - 0.6 2 mA
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 180 260 pF
Series inductance L
S
From top of terminal hole to mounting plane - 7.0 - nH