6121 Baker Road, Suite 108 Minnetonka, MN 55345 Phone (952) 933-6190 Fax (952) 933-6223 1-800-274-4284 www.chtechnology.com Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team for the following questions - Technical Application Assembly Availability Pricing Phone – 1-800-274-4284 E-Mail – sales@chtechnology.com www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.
GT100DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery SOT-227 • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • Material categorization: For definitions of compliance please see www.vishay.
GT100DA60U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Collector to emitter leakage current Forward voltage drop Gate to emitter leakage current SYMBOL MIN. TYP. MAX. VGE = 0 V, IC = 250 μA 600 - - VGE = 15 V, IC = 100 A - 1.72 2.0 VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.0 2.2 3.5 4.
GT100DA60U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 175 °C - - 0.26 - - 0.73 - 0.05 - Mounting torque, 6-32 or M3 screw - - 1.
GT100DA60U www.vishay.com Vishay Semiconductors 200 2.5 175 150 TJ = 175 °C 100 2.0 100 A 1.5 50 A VCE (V) IF (A) 125 TJ = 125 °C 75 50 TJ = 25 °C 27 A 25 0 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 VFM (V) 93185_05 20 140 180 TJ (°C) Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 10 3.0 1 2.5 TJ = 175 °C Energy (mJ) 0.1 ICES (mA) 100 93185_08 Fig. 5 - Typical Diode Forward Characteristics TJ = 125 °C 0.01 0.001 TJ = 25 °C 0.0001 0.
GT100DA60U www.vishay.com Vishay Semiconductors 190 6 170 5 150 Energy (mJ) 4 TJ = 125 °C 130 trr (ns) Eoff 3 2 110 90 Eon TJ = 25 °C 70 1 50 0 0 10 20 30 40 30 100 50 Rg (Ω) 93185_11 1000 dIF/dt (A/μs) 93185_13 Fig. 13 - Typical trr Diode vs. dIF/dt Vrr = 200 V, IF = 50 A Fig. 11 - Typical IGBT Energy Loss vs.
GT100DA60U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 93185_16 Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.1 0.01 0.001 0.00001 93185_17 0.0001 0.001 0.01 0.
GT100DA60U www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 18a - Clamped Inductive Load Test Circuit Fig. 18b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig.
GT100DA60U www.vishay.
Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.