Instruction Manual

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Document Number: 93011
4 Revision: 23-Apr-09
GB75DA120UP
Vishay High Power Products
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
Fig. 5 - Typical Diode Forward Characteristics
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 7 - Typical IGBT Threshold Voltage
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
Fig. 9 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, L = 500 µH, V
CC
= 600 V,
R
g
= 5 Ω, V
GE
= 15 V
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 µH, V
CC
= 600 V,
R
g
= 5 Ω, V
GE
= 15 V
I
F
(A)
V
FM
(V)
01 3245
0
200
50
150
100
T
J
= 125 °C
T
J
= 25 °C
I
CES
(mA)
V
CES
(V)
0 200 400 600 800 1000 1200
0.0001
10
0.01
1
0.001
0.1
T
J
= 125 °C
T
J
= 25 °C
V
geth
(V)
I
C
(mA)
0.0002 0.0004 0.0006 0.0008 0.001
3.0
6.0
4.0
4.5
5.0
5.5
3.5
T
J
= 125 °C
T
J
= 25 °C
V
CE
(V)
T
J
(°C)
25 50 75 125100 150
2.0
4.5
3.0
3.5
4.0
2.5
100 A
75 A
27 A
Energy (mJ)
I
C
(A)
10 20 30 50 60 7040 80
0
4.0
1.5
3.0
2.5
2.0
3.5
1.0
0.5
E
on
E
off
Switching Time (µs)
I
C
(A)
020 6040 80
10
1000
100
t
d(off)
t
d(on)
t
f
t
r