Instruction Manual

Document Number: 93011 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 23-Apr-09 3
GB75DA120UP
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
Vishay High Power Products
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V
Fig. 3 - Typical IGBT Collector Current Characteristics
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range T
J
, T
Stg
- 40 - 150 °C
Junction to case
IGBT
R
thJC
- - 0.19
°C/WDiode - - 0.52
Case to sink per module R
thCS
-0.05-
Mounting torque, 6-32 or M3 screw - - 1.3 Nm
Weight -30-g
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
020406080 100 120 140
0
160
100
120
140
20
40
60
80
I
C
(A)
V
CE
(V)
10 100 1000 10 000
1
1000
10
100
I
C
(A)
V
CE
(V)
0246135
0
200
50
100
150
T
J
= 125 °C
T
J
= 25 °C
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
0 10203040506070
0
160
100
120
140
20
40
60
80