Instruction Manual

Document Number: 93011 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 23-Apr-09 1
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
GB75DA120UP
Vishay High Power Products
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED
®
low Q
rr
, low switching energy
•Positive V
CE(on)
temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance (≤ 5 nH typical)
• Industry standard outline
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC 75 A at 95 °C
V
CE(on)
typical at 75 A, 25 °C 3.3 V
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200 V
Continuous collector current I
C
T
C
= 25 °C 131
A
T
C
= 80 °C 89
Pulsed collector current I
CM
200
Clamped inductive load current I
LM
200
Diode continuous forward current I
F
T
C
= 25 °C 59
T
C
= 80 °C 39
Gate to emitter voltage V
GE
± 20 V
Power dissipation, IGBT P
D
T
C
= 25 °C 658
W
T
C
= 80 °C 369
Power dissipation, diode P
D
T
C
= 25 °C 240
T
C
= 80 °C 135
Isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V