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GB75DA120UP Vishay High Power Products Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Speed 8 kHz to 60 kHz • Very low internal inductance (≤ 5 nH typical) • Industry standard outline • Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY BENEFITS VCES 1200 V IC DC 75 A at 95 °C VCE(on) typical at 75 A, 25 °C
GB75DA120UP Vishay High Power Products Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage VBR(CES) Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Collector to emitter leakage current Forward voltage drop Gate to emitter leakage current VCE(on) VGE(th) VGE(th)/ΔTJ ICES VFM IGES MIN. TYP. MAX.
GB75DA120UP Insulated Gate Bipolar Transistor Vishay High Power Products (Ultrafast IGBT), 75 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - - 0.19 - - 0.52 - 0.05 - Mounting torque, 6-32 or M3 screw - - 1.
GB75DA120UP Vishay High Power Products Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A 200 4.5 100 A 4.0 150 VCE (V) IF (A) 75 A 100 3.5 3.0 TJ = 125 °C 50 27 A 2.5 TJ = 25 °C 0 2.0 0 1 2 3 4 5 25 50 75 VFM (V) 100 125 150 TJ (°C) Fig. 5 - Typical Diode Forward Characteristics Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 10 4.0 3.5 TJ = 125 °C 1 Energy (mJ) ICES (mA) 3.0 0.1 0.01 Eoff 2.0 1.5 Eon 1.0 TJ = 25 °C 0.
GB75DA120UP Insulated Gate Bipolar Transistor Vishay High Power Products (Ultrafast IGBT), 75 A 14 250 230 12 Eon 190 8 trr (ns) Energy (mJ) TJ = 125 °C 210 10 Eoff 6 170 TJ = 25 °C 150 130 4 110 2 90 0 0 10 20 30 40 70 100 50 1000 RG (Ω) dIF/dt (A/µs) Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 75 A, L = 500 µH, VCC = 600 V, VGE = 15 V Fig. 13 - Typical trr diode vs.
GB75DA120UP Vishay High Power Products Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 Single pulse (thermal response) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Rectangular Pulse Duration (t1) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (diode) R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.
GB75DA120UP Vishay Semiconductor Italy ORDERING INFORMATION TABLE SOT-227 Package Details Dimensions are shown in millimeters ( inches ) 38.30 ( 1.508 ) 37.80 ( 1.488 ) 4.40 (.173 ) 4.20 (.165 ) CHAMFER 2.00 ( .079 ) X 457 -A4 LEAD ASSIGMENTS E S E C 4 1 3 6.25 ( .246 ) 12.50 ( .492 ) 1 D C 25.70 ( 1.012 ) 25.20 ( .992 ) E G IGBT -B- A1 K2 R FULL 7.50 ( .295 ) 15.00 ( .590 ) 2 S E G HEXFET IGBT 3 4 1 2 3 2 K1 A2 HEXFRED 30.20 ( 1.189 ) 29.80 ( 1.173 ) 4X 2.10 ( .082 ) 1.90 ( .
GB75DA120UP Insulated Gate Bipolar Transistor Vishay High Power Products (Ultrafast IGBT), 75 A 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig.
GB75DA120UP Vishay High Power Products Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A CIRCUIT CONFIGURATION 3 (C) 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95036 Packaging information http://www.vishay.com/doc?95037 www.vishay.com 8 For technical questions, contact: ind-modules@vishay.
Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.
