User guide

GB70NA60UF
Vishay Semiconductor Italy
3
Revision 13-Mar-09
IGBT Switch
C
ies
Input capacitance 7430 V
GE
= 0V, V
CC
= 30V
C
oes
Output capacitance 530 pF f = 1Mhz
C
res
Reverse transfer capacitance 94
Q
g
Total Gate Charge (turn-on) 320 I
C
= 50A, V
GE
= 15V, V
CC
= 400V
Q
ge
Gate-Emitter Charge (turn-on) 42 nC
Q
gc
Gate-Collector Charge (turn-on) 110
E
on
Turn-On Switching Loss 1150
E
off
Turn-Off Switching Loss 1162 μJI
C
= 70A, V
CC
= 360V
E
ts
Total Switching Loss 2312 V
GE
= 15V, R
g
= 5Ω
t
d(on)
Turn-on Delay Time 206 L = 50 0μH
t
r
Rise Time 68 ns
t
d(off)
Turn-off Delay Time 205
t
f
Fall Time 100
E
on
Turn-On Switching Loss 1265 μJ
E
off
Turn-Off Switching Loss 1278 I
C
= 70A, V
CC
= 360V
E
ts
Total Switching Loss 2543 V
GE
= 15V, R
g
= 5Ω
t
d(on)
Turn-on Delay Time 208 ns L = 50 0μH, T
J
= 125°C
t
r
Rise Time 69
t
d(off)
Turn-off Delay Time 208
t
f
Fall Time 100
RBSOA Reverse Bias safe operating area full square
DIODE
C
T
Total capacitance 66 V
R
= 600V
I
rr
Peak reverse recovery current 4 A T
J
= 25°C
11 T
J
= 125°C
t
rr
Reverse recovery time 59 ns T
J
= 25°C I
F
= 50A, V
R
= 200V
130 T
J
= 125°C dI/dt = 200A/μs
Q
rr
Reverse recovery charge 118 nC T
J
= 25°C
715 T
J
= 125°C
SWITCHING CHARACTERISTICS @ T
J
= 25°C (unless otherwise specified)
PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS
T
J
= 150°C, I
C
= 120A, V
CC
= 480V
V
P
= 600V, R
g
= 5Ω, V
GE
= 15 to 0V