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GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching operating frequencies 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics INT-A-PAK • Industry standard package • Al2O3 DBC • UL pending • Designed for
GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage VBR(CES) Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Diode forward voltage drop Gate to emitter leakage current VCE(on) VGE(th) ICES VFM IGES MIN. TYP. MAX.
GB200TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 209 A THERMAL - MECHANICAL CHARACTERISTICS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - 0.13 0.16 - 0.19 0.32 - 0.
GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A 1000 200 td(off) 100 Tj = 125°C 50 td(on) Switching Time (ns) IF (A) 150 tf 100 tr Tj = 25°C 10 0 0.0 0.5 1.0 1.5 40 2.0 60 80 100 120 140 160 180 200 220 VF (V) IC (A) Fig. 8 - Typical Switching Time vs. IC TJ = 125 °C, L = 200 µH, VCC = 360 V, RG = 10 Ω, VGE = 15 V Fig.
GB200TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 209 A 100 Total Switching Losses (mJ) 10 ohm 90 80 IRR (A) 70 27 ohm 60 50 47 ohm 40 30 20 40 80 120 160 5 200 10 15 20 25 30 35 40 45 50 IF (A) RG (Ω) Fig. 11 - Typical Diode IRR vs. IF TJ = 125 °C Fig. 14 - Typical Switching Losses vs.
GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A Thermal response (Z thJC) 1 0.1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 0.01 D = 0.02 D = 0.01 Notes: 1. Duty Factor D = t1/t2 Single Pulse (Thermal Response) 0.001 1E-05 1E-04 1E-03 1E-02 2. Peak Tj = Pdm x ZthJC + Tc 1E-01 1E+00 1E+01 t1 , Rectangular Pulse Duration (sec) Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) Thermal response (Z thJC) 1 D = 0.5 0.1 D = 0.2 D = 0.
GB200TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 209 A ORDERING INFORMATION TABLE Device code G B 200 T S 60 N PbF 1 2 3 4 5 6 7 8 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - B = IGBT Generation 5 NPT 3 - Current rating (200 = 200 A) 4 - Circuit configuration (T = Half-bridge) 5 - Package indicator (S = INT-A-PAK) 6 - Voltage rating (60 = 600 V) 7 - Speed/type (N = Ultrafast IGBT) 8 - Lead (Pb)-free CIRCUIT CONFIGURATION
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