Owner's manual

Document Number: 93913 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 [e-mail]
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Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
®
Diodes, 15 A
GB15XP120KTPbF
Vishay Semiconductors
FEATURES
• Generation 5 NPT 1200 V IGBT technology
•HEXFRED
®
diode with ultrasoft reverse
recovery
• Very low conduction and switching losses
• Optional SMT thermistor (NTC)
• Aluminum oxide DBC
• Very low stray inductance design for high speed operation
• Short circuit 10 μs
• Square RBSOA
• Operating frequencies 8 kHz to 60 kHz
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for inverter motor drive applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
1200 V
V
CE(on)
typical at V
GE
= 15 V 2.51 V
I
C
at T
C
= 100 °C 15 A
t
sc
at T
J
= 150 °C > 10 μs
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200 V
Continuous collector current I
C
T
C
= 25 °C 30
A
T
C
= 100 °C 15
Pulsed collector current I
CM
60
Peak switching current I
LM
60
Diode continuous forward current I
F
T
C
= 100 °C 15
Peak diode forward current I
FM
30
Gate to emitter voltage V
GE
± 20
V
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500
Maximum power dissipation
(including diode and IGBT)
P
D
T
C
= 25 °C 187
W
T
C
= 100 °C 75