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GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMT thermistor (NTC) • Aluminum oxide DBC MTP • Very low stray inductance design for high speed operation • Short circuit 10 μs • Square RBSOA • Operating frequencies 8 kHz to 60 kHz • UL approved file E78996 PRODUCT SUMMARY • Compl
GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 15 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage Temperature coefficient of V(BR)CES Collector to emitter voltage Gate threshold voltage V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) TEST CONDITIONS MIN. TYP. MAX. 1200 - - V VGE = 0 V, IC = 1 mA - 1.
GB15XP120KTPbF Three Phase Inverter Module in MTP Package Vishay Semiconductors 1200 V NPT IGBT and HEXFRED® Diodes, 15 A THERMISTOR SPECIFICATIONS (T CODE ONLY) PARAMETER MIN. TYP. MAX. UNITS Resistance SYMBOL R0 (1) T0 = 25 °C TEST CONDITIONS - 30 - k Sensitivity index of the thermistor material (1)(2) T0 = 25 °C T1 = 85 °C - 4000 - K MIN. TYP. MAX. UNITS TJ - 40 - 150 TStg - 40 - 125 - - 1.1 - - 1.7 - 0.50 - - 0.
GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 15 A 1000 20 tF Ice=7.5A Ice=15A Ice=30A tdOFF Swiching Time (ns) Vce (V) 15 10 5 100 tdON 10 tR 1 0 5 10 15 5 20 10 15 Vge (V) 25 30 Fig. 6 - Typical Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCE = 600 V Rg = 10 ; VGE = 15 V Fig. 3 - Typical VCE vs. VGE TJ = 25 °C 4 20 ETOT Ice=7.
GB15XP120KTPbF Three Phase Inverter Module in MTP Package Vishay Semiconductors 1200 V NPT IGBT and HEXFRED® Diodes, 15 A 10000 120 Coes Ptot (W) Capacitance (pF) 90 Cies 1000 60 100 30 Cres 10 0 0 10 20 30 0 40 40 80 Tc (°C) Vce (V) 120 160 Fig. 12 - Power Dissipation vs. Case Temperature (IGBT only) Fig. 9 - Typical Capacitance vs. VCE VGE = 0 V; f = 1 MHz 16 100 600V 12 10 20 µs Ic (A) VGE (V) 100 µs 8 1 1 ms 4 10 ms 0.1 0 DC 0.
GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 15 A 160 55 Rg=4.7Ω Tj = 25°C Tj = 125°C Irr (A) Ice (A) 120 Rg=10Ω 45 80 Rg=22Ω 35 25 Rg=47Ω 40 15 0 5 0 4 8 12 16 5 10 Vge (V) 15 20 25 30 35 If (A) Fig. 15 - Typical Transfer Characteristics VCE = 50 V; tp = 10 μs Fig. 17 - Typical Diode Irr vs.
GB15XP120KTPbF Three Phase Inverter Module in MTP Package Vishay Semiconductors 1200 V NPT IGBT and HEXFRED® Diodes, 15 A Thermal Response (ZthJC) 10 1 0.5 0.3 0.1 0.1 R1 R1 0.05 τJ τ1 0.02 0.01 0.01 R2 R2 τ2 τ1 τ2 τ3 τ3 Ci= τi/Ri Ci i/Ri SINGLE PULSE (THERMAL RESPONSE) 0.001 1E-05 Ri (°C/W) τi (sec) 0.000547 0.196 0.025615 0.515 0.037176 0.389 R3 R3 1E-04 Notes: 1. Duty Factor D = t1/t2 2.
GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 15 A ORDERING INFORMATION TABLE Device code GB 15 XP 120 K T PbF 1 2 3 4 5 6 7 1 - IGBT module 2 - Nominal current rating (15 = 15 A) 3 - Circuit configuration (XP = Three phase inverter) 4 - Voltage code (120 = 1200 V) 5 - Speed/type (K = Ultrafast IGBT/inverter motor drive application) 6 - Special option: None = No special option T = Thermistor - 7 PbF = L
Outline Dimensions Vishay Semiconductors MTP Ø 1.1 20.5 12 ± 0.5 2.5 4 Ø5 3.5 DIMENSIONS in millimeters 31.8 33 2 8 7 6 5 4 3 1 13 9 10 11 1.8 12 8.1 1.2 ± 0.1 7.2 ± 0.1 7.8 ± 0.1 R2.6 (x 3) 5.7 ± 0.1 11.35 ± 0.1 5.4 ± 0.1 11.35 ± 0.1 27.5 3 ± 0.1 45° 8.7 ± 0.1 R5.8 (x 2) 8.5 ± 0.1 6 ± 0.1 3 ± 0.1 39.5 ± 0.1 44.5 48.7 1.3 63.5 ± 0.
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