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GB150TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 138 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching operating frequencies 8 to 60 kHz RoHS COMPLIANT • Low VCE(on) • 10 µs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics INT-A-PAK • Industry standard package • Al2O3 DBC • UL pending • Designed for i
GB150TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 138 A ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage VBR(CES) Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Diode forward voltage drop Gate to emitter leakage current VCE(on) VGE(th) ICES VFM IGES MIN. TYP. MAX.
GB150TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 138 A THERMAL - MECHANICAL CHARACTERISTICS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - 0.17 0.25 - 0.19 0.32 - 0.
GB150TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 138 A 1000 200 td(off) Switching Time (ns) IF (A) 150 100 50 Tj = 125°C td(on) tf 100 tr Tj = 25°C 10 0 0.0 0.5 1.0 1.5 0 2.0 40 80 VF (V) 160 Fig. 8 - Typical Switching Time vs. IC TJ = 125 °C, L = 200 µH, VCC = 360 V, RG = 10 Ω, VGE = 15 V Fig.
GB150TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 138 A 100 17 16 Total Switching Losses (mJ) 10 ohm 90 80 IRR (A) 70 27 ohm 60 50 40 47 ohm 30 13 12 11 10 9 8 6 40 60 80 100 120 140 0 160 10 20 30 40 50 IF (A) RG (Ω) Fig. 11 - Typical Diode IRR vs. IF TJ = 125 °C Fig. 14 - Typical Switching Losses vs.
GB150TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 138 A Thermal response (Z thJC) 1 D = 0.5 0.1 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 Single Pulse (Thermal Response) 0.001 1E-05 1E-04 1E-03 2. Peak Tj = Pdm x ZthJC + Tc 1E-02 1E-01 1E+00 1E+01 t1 , Rectangular Pulse Duration (sec) Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) Thermal response (Z thJC) 1 D = 0.5 0.1 D = 0.2 D = 0.
GB150TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 138 A ORDERING INFORMATION TABLE Device code G B 150 T S 60 N PbF 1 2 3 4 5 6 7 8 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - B = IGBT Generation 5 NPT 3 - Current rating (150 = 150 A) 4 - Circuit configuration (T = Half-bridge) 5 - Package indicator (S = INT-A-PAK) 6 - Voltage rating (60 = 600 V) 7 - Speed/type (N = Ultrafast IGBT) 8 - Lead (Pb)-free CIRCUIT CONFIGURATION
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