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GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching operating frequencies 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics INT-A-PAK • Industry standard package • Al2O3 DBC • UL pending • Designed for
GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage VBR(CES) Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Diode forward voltage drop Gate to emitter leakage current VCE(on) VGE(th) ICES VFM IGES MIN. TYP. MAX.
GB100TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 108 A THERMAL - MECHANICAL CHARACTERISTICS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - 0.23 0.32 - 0.38 0.64 - 0.
GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A 200 1000 td(off) Switching Time (ns) IF (A) 150 100 50 td(on) 100 tf Tj = 125°C tr Tj = 25°C 0 10 0.0 0.5 1.0 1.5 20 2.0 40 60 VF (V) 100 Fig. 8 - Typical Switching Time vs. IC TJ = 125 °C, L = 200 µH, VCC = 360 V, RG = 4.7 Ω, VGE = 15 V Fig.
GB100TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 108 A 100 9 Total Switching Losses (mJ) 90 4.7 ohm 80 IRR (A) 70 60 27 ohm 50 40 30 47 ohm 20 8 7 6 5 4 3 2 10 1 0 0 20 40 60 80 100 0 120 10 20 Fig. 11 - Typical Diode IRR vs. IF, TJ = 125 °C 50 Total Switching Losses (mJ) 10 80 IRR (A) 40 Fig. 14 - Typical Switching Losses vs.
GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A Thermal response (Z thJC) 1 D = 0.5 0.1 D = 0.2 D = 0.1 D = 0.05 0.01 D = 0.02 D = 0.01 Notes: 1. Duty Factor D = t1/t2 Single Pulse (Thermal Response) 0.001 1E-05 1E-04 1E-03 2. Peak Tj = Pdm x ZthJC + Tc 1E-02 1E-01 1E+00 1E+01 t1 , Rectangular Pulse Duration (sec) Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) 1 Thermal response (Z thJC) D = 0.5 D = 0.2 0.1 D = 0.
GB100TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 108 A ORDERING INFORMATION TABLE Device code G B 100 T S 60 N PbF 1 2 3 4 5 6 7 8 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - B = IGBT Generation 5 NPT 3 - Current rating (100 = 100 A) 4 - Circuit configuration (T = Half-bridge) 5 - Package indicator (S = INT-A-PAK) 6 - Voltage rating (60 = 600 V) 7 - Speed/type (N = Ultrafast IGBT) 8 - Lead (Pb)-free CIRCUIT CONFIGURATION
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