Instruction Manual

1
FEATURES
BENEFITS
GB100DA60UP
IINSULATED GATE BIPOLAR TRANSISTOR
Warp2 Speed IGBT
Vishay Semiconductor Italy
28-Mar-08
V
CES
600V
V
CE(on) typ
2.4V @ 100A, 25°C
I
C(DC)
100A @ 61°C
I
F(DC)
100A @ 85°C
PRODUCT SUMMARY
SOT-227
• NPT Warp2 Speed IGBT Technology
with Positive Temperature Coefficient
• Hexfred Antiparallel Diodes with UltraSoft
Reverse Recovery
• Fully isolated package (2,500 volt AC)
• Very low internal inductance (5 nH typ.)
• Industry standard outline
• TOTALLY LEAD-FREE
• Designed for increased operating efficiency in
power conversion: UPS, SMPS, Welding,
Induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227
packages
• Higher Switching Frequency up to 150kHz
• Lower Conduction Losses and Switching Losses
• Low EMI, requires Less Snubbing
V
CES
Collector-to-Emitter Voltage 600 V
I
C
Continuos Collector Current @ T
C
= 25°C 125 A
@ T
C
= 80°C 85
I
CM
Pulsed Collector Current 300
I
LM
Clamped Inductive Load Current 300
I
F
Diode Continuos Forward Current @ T
C
= 25°C 160
@ T
C
= 80°C 105
I
FM
Peak Diode Forward Current 200
V
GE
Gate-to-Emitter Voltage ± 20 V
P
D
Maximum Power Dissipation, IGBT @ T
C
= 25°C 447 W
@ T
C
= 80°C 250
P
D
Maximum Power Dissipation, Diode @ T
C
= 25°C 313 W
@ T
C
= 80°C 175
V
ISOL
Isolation Voltage, Any Terminal to Case, t = 1 min 2500 V
PARAMETERS MAX UNITS
ABSOLUTE MAXIMUM RATINGS