Manual
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93912
4 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 03-Aug-10
GB05XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
®
Diodes, 5 A
Fig. 3 - Typical V
CE
vs. V
GE
T
J
= 25 °C
Fig. 4 - Typical V
CE
vs. V
GE
T
J
= 125 °C
Fig. 5 - Typical Energy Loss vs. I
C
T
J
= 125 °C, L = 2 mH, V
CE
= 600 V
R
g
= 10 ; V
GE
= 15 V
Fig. 6 - Typical Switching Time vs. I
C
T
J
= 125 °C, L = 2 mH, V
CE
= 600 V
R
g
= 10 ; V
GE
= 15 V
Fig. 7 - Typical Energy Loss vs. R
g
T
J
= 125 °C, L = 2 mH, V
CE
= 600 V
I
C
= 6 A; V
GE
= 15 V
Fig. 8 - Typical Switching Time vs. R
g
T
J
= 125 °C, L = 2 mH, V
CE
= 600 V
I
C
= 6 A; V
GE
= 15 V
5101520
0
5
10
15
20
I
ce=3A
I
ce=6A
I
ce=12A
Vge (V)
Vce (V)
5101520
0
5
10
15
20
I
ce=3A
I
ce=6A
I
ce=12A
Vge (V)
Vce (V)
Ic (A)
Energy (mJ)
36912
0
500
1000
1500
2000
2500
E
TOT
E
ON
E
OFF
36912
1
10
100
1000
Ic (A)
Swiching Time (ns)
t
F
td
OFF
td
ON
t
R
Rg ( )
Energy (mJ)
0 1020304050
200
500
800
1100
1400
E
TOT
E
OFF
E
ON
0 1020304050
10
100
1000
Rg ( )
Swiching Time (ns)
t
F
td
OFF
td
ON
t
R